Invention Grant
- Patent Title: 3D stacking semiconductor device
-
Application No.: US15490946Application Date: 2017-04-19
-
Publication No.: US10332936B2Publication Date: 2019-06-25
- Inventor: Shih-Hung Chen
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L27/24 ; H01L21/768 ; H01L27/11565 ; H01L27/1157 ; H01L27/11573 ; H01L27/11524 ; H01L27/11519 ; H01L29/792 ; H01L29/66 ; H01L23/28 ; H01L27/11548 ; H01L27/11556 ; H01L27/11575 ; H01L27/11582

Abstract:
A 3D stacking semiconductor device and a manufacturing method thereof are provided. The method includes using a set of N etch masks for creating O different numbers of removed layers in the conductive layers and the insulating layers for forming landing areas on the conductive layers in the contact region, each mask including mask and etch regions, N being an integer equal to or larger than 2, O being an integer larger than 2, 2N-1
Public/Granted literature
- US20180308748A1 3D STACKING SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-10-25
Information query
IPC分类: