Invention Grant
- Patent Title: Thin film transistor, manufacturing method for array substrate, array substrate and display device
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Application No.: US15554446Application Date: 2017-01-20
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Publication No.: US10332987B2Publication Date: 2019-06-25
- Inventor: Ce Ning , Wei Yang , Hehe Hu
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Banner & Witcoff, Ltd.
- Priority: CN201610304950 20160510
- International Application: PCT/CN2017/071930 WO 20170120
- International Announcement: WO2017/193637 WO 20171116
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66 ; H01L21/77 ; H01L21/426 ; H01L21/44 ; H01L21/4757 ; H01L21/4763 ; H01L29/786 ; H01L21/465 ; H01L21/425

Abstract:
A thin film transistor, a manufacturing method for an array substrate, the array substrate, and a display device are provided. The manufacturing method for a thin film transistor includes: forming a semiconductor layer; performing a modification treatment on a surface layer of a region of the semiconductor layer, so that the region of the semiconductor layer has a portion in a first direction perpendicular to the semiconductor layer formed as an etching blocking layer, portions of the semiconductor layer on both sides of the etching blocking layer in a second direction parallel to a surface of the semiconductor layer remaining unmodified; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode and the drain electrode being formed on both sides of a center line of the region perpendicular to the second direction, and spaced from each other in the second direction.
Public/Granted literature
- US20180166562A1 Thin Film Transistor, Manufacturing Method for Array Substrate, Array Substrate and Display Device Public/Granted day:2018-06-14
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