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公开(公告)号：US12298641B2
公开(公告)日：2025-05-13
申请号：US18638710
申请日：2024-04-18
Applicant: BOE Technology Group Co., Ltd.
Inventor： Guangcai Yuan , Hehe Hu , Ce Ning , Hui Guo , Fengjuan Liu , Dongfang Wang , Zhengliang Li , Jiayu He
IPC: G02F1/1368 , G02F1/1362 , H01L27/12
Abstract: An array substrate and a manufacturing method therefor, and a display apparatus are provided. The array substrate includes an underlay substrate, and at least one first transistor, at least one data line and at least one pixel electrode disposed on the underlay substrate. The at least one first transistor includes a first active layer and a first gate; the first gate is located on a side of the first active layer away from the underlay substrate, and orthographic projections of the first gate and the first active layer on the underlay substrate are at least partially overlapped. The first active layer is electrically connected to the data line and the pixel electrode, respectively. The data line is located on a side of the first active layer close to the underlay substrate, and the pixel electrode is located on a side of the first gate away from the underlay substrate.
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2.发明授权公开(公告)号：US12183824B2
公开(公告)日：2024-12-31
申请号：US17611156
申请日：2021-01-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jie Huang , Jiayu He , Ce Ning , Zhengliang Li , Hehe Hu , Fengjuan Liu , Nianqi Yao , Kun Zhao , Tianmin Zhou , Jiushi Wang , Zhongpeng Tian
IPC: H01L29/786 , H01L27/12 , H01L29/66 , G02F1/1368
Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.
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公开(公告)号：US20240194161A1
公开(公告)日：2024-06-13
申请号：US17908359
申请日：2021-08-31
Applicant: BOE Technology Group Co., Ltd.
Inventor： Lizhong Wang , Guangcai Yuan , Ce Ning , Hehe Hu , Nianqi Yao , Xin Xie , Yifang Huang , Liping Lei , Chen Xu
IPC: G09G3/36
CPC classification number: G09G3/3677 , G09G2300/0408 , G09G2300/0426 , G09G2310/0286
Abstract: A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor; an average turn-on current of at least one first thin film transistor is Ion1, and an average turn-on current of at least one second thin film transistor is Ion2, Ion1>Ion2.
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公开(公告)号：US10818694B2
公开(公告)日：2020-10-27
申请号：US16166356
申请日：2018-10-22
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wei Yang , Hehe Hu , Xinhong Lu
IPC: H01L27/12 , H01L29/786 , H01L29/66 , H01L27/32
Abstract: The present disclosure relates to array substrate, preparation method thereof and display panel. An array substrate comprises: a first thin film transistor and a second thin film transistor over a substrate; wherein the first thin film transistor comprises a first portion of a first insulating layer, the first insulating layer comprises a first recess corresponding to the second thin film transistor, and the second thin film transistor is located in the first recess; and wherein a thickness of a second portion of the first insulating layer, which is below the bottom of the first recess, is smaller than that of the first portion of the first insulating layer.
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公开(公告)号：US10236393B2
公开(公告)日：2019-03-19
申请号：US15542298
申请日：2016-09-23
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hehe Hu
IPC: H01L29/00 , H01L29/786 , H01L29/423 , G09G3/20 , H01L27/12 , H01L29/66
Abstract: A TFT, a method for driving TFT, an array substrate, and a display device are disclosed. The TFT comprises a first gate on a base plate, an active layer insulated from the first gate, a source and a drain, and a second gate arranged on a side of the active layer away from the first gate and insulated from the active layer. The second gate comprises at least two sub-gates. An orthographic projection of each sub-gate overlaps that of a channel region. The first gate is capable of controlling the complete channel region, and the second gate is capable of controlling a portion of the channel region. The first and second gates maintain an energy band of the channel region at a relatively stable state, and thus maintain stable switching characteristics. This increases reliability and electrical performance of TFT.
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Patent Agency Ranking
公开(公告)号：US09588426B2
公开(公告)日：2017-03-07
申请号：US14428143
申请日：2014-08-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jianguo Wang , Hehe Hu
CPC classification number: G03F7/0757 , G03F7/0382 , G03F7/0755 , G03F7/16 , G03F7/20 , G03F7/32
Abstract: Disclosed is a negative photoresist comprising 1 to 90 parts of hydroxyl-containing or carboxyl-containing film-forming resin, 1 to 99 parts of silicon-containing vinyl ether monomer, 0.1 to 15 parts by weigh of a crosslinking agent, and an organic solvent capable of dissolving the aforesaid substances. Disclosed is also methods of preparing and using the negative photoresist.
Abstract translation: 公开了含有1〜90份含羟基或含羧基的成膜树脂，1〜99份含硅乙烯基醚单体，0.1〜15重量份交联剂和有机溶剂的负性光致抗蚀剂 能够溶解上述物质。 还公开了制备和使用负性光致抗蚀剂的方法。
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公开(公告)号：US12106728B2
公开(公告)日：2024-10-01
申请号：US17908359
申请日：2021-08-31
Applicant: BOE Technology Group Co., Ltd.
Inventor： Lizhong Wang , Guangcai Yuan , Ce Ning , Hehe Hu , Nianqi Yao , Xin Xie , Yifang Huang , Liping Lei , Chen Xu
IPC: G09G3/36
CPC classification number: G09G3/3677 , G09G2300/0408 , G09G2300/0426 , G09G2310/0286
Abstract: A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor; an average turn-on current of at least one first thin film transistor is Ion1, and an average turn-on current of at least one second thin film transistor is Ion2, Ion1>Ion2.
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公开(公告)号：US11534755B2
公开(公告)日：2022-12-27
申请号：US16755911
申请日：2019-04-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Ce Ning , Xiaochen Ma , Hehe Hu , Guangcai Yuan , Xin Gu
IPC: B01L3/00
Abstract: The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.
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公开(公告)号：US11372451B2
公开(公告)日：2022-06-28
申请号：US16900647
申请日：2020-06-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jiayu He , Xue Liu , Hehe Hu , Zhengliang Li
Abstract: A display substrate, a display device, and a method of forming a display substrate are provided. The display substrate includes: a flexible base substrate and a plurality of pixel islands arranged on the flexible base substrate, where the plurality of pixel islands are arranged in an array, two adjacent pixel islands are connected through an island bridge, display units are arranged on the pixel islands, the display units on the pixel islands are electrically connected through an inter-island connection line arranged on the island bridge, a region outside the pixel islands and the island bridge is a hollow area, and axes of four island bridges around the hollow area are arranged as a parallelogram.
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公开(公告)号：US11360357B2
公开(公告)日：2022-06-14
申请号：US16639786
申请日：2019-01-03
Inventor： Wenjun Xiao , Shijun Wang , Hehe Hu , Haoliang Zheng , Xi Chen , Xiaochuan Chen , Guangcai Yuan
IPC: G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L27/12
Abstract: A display substrate and a manufacturing method thereof and a display device are disclosed. The manufacturing method of the display substrate includes: forming a first display electrode; and forming a thin film transistor, which includes forming a semiconductor layer; The first display electrode and the semiconductor layer are in one same layer, and a step of forming the first display electrode is performed before performing a step of forming the semiconductor layer.
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