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公开(公告)号：US20240194161A1
公开(公告)日：2024-06-13
申请号：US17908359
申请日：2021-08-31
发明人： Lizhong Wang , Guangcai Yuan , Ce Ning , Hehe Hu , Nianqi Yao , Xin Xie , Yifang Huang , Liping Lei , Chen Xu
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G2300/0408 , G09G2300/0426 , G09G2310/0286
摘要： A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor; an average turn-on current of at least one first thin film transistor is Ion1, and an average turn-on current of at least one second thin film transistor is Ion2, Ion1>Ion2.
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公开(公告)号：US10818694B2
公开(公告)日：2020-10-27
申请号：US16166356
申请日：2018-10-22
发明人： Wei Yang , Hehe Hu , Xinhong Lu
IPC分类号： H01L27/12 , H01L29/786 , H01L29/66 , H01L27/32
摘要： The present disclosure relates to array substrate, preparation method thereof and display panel. An array substrate comprises: a first thin film transistor and a second thin film transistor over a substrate; wherein the first thin film transistor comprises a first portion of a first insulating layer, the first insulating layer comprises a first recess corresponding to the second thin film transistor, and the second thin film transistor is located in the first recess; and wherein a thickness of a second portion of the first insulating layer, which is below the bottom of the first recess, is smaller than that of the first portion of the first insulating layer.
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公开(公告)号：US10236393B2
公开(公告)日：2019-03-19
申请号：US15542298
申请日：2016-09-23
发明人： Hehe Hu
IPC分类号： H01L29/00 , H01L29/786 , H01L29/423 , G09G3/20 , H01L27/12 , H01L29/66
摘要： A TFT, a method for driving TFT, an array substrate, and a display device are disclosed. The TFT comprises a first gate on a base plate, an active layer insulated from the first gate, a source and a drain, and a second gate arranged on a side of the active layer away from the first gate and insulated from the active layer. The second gate comprises at least two sub-gates. An orthographic projection of each sub-gate overlaps that of a channel region. The first gate is capable of controlling the complete channel region, and the second gate is capable of controlling a portion of the channel region. The first and second gates maintain an energy band of the channel region at a relatively stable state, and thus maintain stable switching characteristics. This increases reliability and electrical performance of TFT.
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公开(公告)号：US09588426B2
公开(公告)日：2017-03-07
申请号：US14428143
申请日：2014-08-15
发明人： Jianguo Wang , Hehe Hu
CPC分类号： G03F7/0757 , G03F7/0382 , G03F7/0755 , G03F7/16 , G03F7/20 , G03F7/32
摘要： Disclosed is a negative photoresist comprising 1 to 90 parts of hydroxyl-containing or carboxyl-containing film-forming resin, 1 to 99 parts of silicon-containing vinyl ether monomer, 0.1 to 15 parts by weigh of a crosslinking agent, and an organic solvent capable of dissolving the aforesaid substances. Disclosed is also methods of preparing and using the negative photoresist.
摘要翻译： 公开了含有1〜90份含羟基或含羧基的成膜树脂，1〜99份含硅乙烯基醚单体，0.1〜15重量份交联剂和有机溶剂的负性光致抗蚀剂 能够溶解上述物质。 还公开了制备和使用负性光致抗蚀剂的方法。
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公开(公告)号：US12106728B2
公开(公告)日：2024-10-01
申请号：US17908359
申请日：2021-08-31
发明人： Lizhong Wang , Guangcai Yuan , Ce Ning , Hehe Hu , Nianqi Yao , Xin Xie , Yifang Huang , Liping Lei , Chen Xu
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G2300/0408 , G09G2300/0426 , G09G2310/0286
摘要： A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor; an average turn-on current of at least one first thin film transistor is Ion1, and an average turn-on current of at least one second thin film transistor is Ion2, Ion1>Ion2.
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公开(公告)号：US11534755B2
公开(公告)日：2022-12-27
申请号：US16755911
申请日：2019-04-16
发明人： Ce Ning , Xiaochen Ma , Hehe Hu , Guangcai Yuan , Xin Gu
IPC分类号： B01L3/00
摘要： The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.
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公开(公告)号：US11372451B2
公开(公告)日：2022-06-28
申请号：US16900647
申请日：2020-06-12
发明人： Jiayu He , Xue Liu , Hehe Hu , Zhengliang Li
摘要： A display substrate, a display device, and a method of forming a display substrate are provided. The display substrate includes: a flexible base substrate and a plurality of pixel islands arranged on the flexible base substrate, where the plurality of pixel islands are arranged in an array, two adjacent pixel islands are connected through an island bridge, display units are arranged on the pixel islands, the display units on the pixel islands are electrically connected through an inter-island connection line arranged on the island bridge, a region outside the pixel islands and the island bridge is a hollow area, and axes of four island bridges around the hollow area are arranged as a parallelogram.
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公开(公告)号：US11360357B2
公开(公告)日：2022-06-14
申请号：US16639786
申请日：2019-01-03
发明人： Wenjun Xiao , Shijun Wang , Hehe Hu , Haoliang Zheng , Xi Chen , Xiaochuan Chen , Guangcai Yuan
IPC分类号： G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L27/12
摘要： A display substrate and a manufacturing method thereof and a display device are disclosed. The manufacturing method of the display substrate includes: forming a first display electrode; and forming a thin film transistor, which includes forming a semiconductor layer; The first display electrode and the semiconductor layer are in one same layer, and a step of forming the first display electrode is performed before performing a step of forming the semiconductor layer.
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公开(公告)号：US11245008B2
公开(公告)日：2022-02-08
申请号：US16642522
申请日：2019-07-24
发明人： Xiaochen Ma , Guangcai Yuan , Ce Ning , Hehe Hu , Xin Gu
IPC分类号： H01L29/10 , H01L29/417 , H01L29/423 , H01L29/66 , G01N27/414 , H01L29/786
摘要： The present application provides a TFT, a manufacturing method thereof, and a sensor. The TFT includes a substrate, and a source, a drain and an active layer on the substrate. The active layer includes a microchannel, and the thin film transistor is configured to detect a sample in the microchannel. When a sample to be detected enters the microchannel, the electron distribution in the active layer would be affected, which causes fluctuations in the TFT characteristics. By detecting such fluctuations, detecting the composition and property of the liquid to be detected may be achieved. Moreover, by virtue of the microchannel, the sample may be precisely controlled. The impact of the external environment may be reduced and the detection accuracy can be enhanced. Continuous monitoring instead of one-time detection of the sample may be achieved and the sample detection efficiency may be improved.
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公开(公告)号：US20210226064A1
公开(公告)日：2021-07-22
申请号：US16959179
申请日：2019-11-19
发明人： Xiaochen Ma , Guangcai Yuan , Ce Ning , Xin Gu , Hehe Hu
IPC分类号： H01L29/786 , H01L29/66 , H01L29/417
摘要： Provided are a thin film transistor including: a base cushion layer having a recessed portion, base insulating layer, source-drain layer and active layer. The base insulating layer is located on a side of the base cushion layer where the recessed portion is located, and has a first and second partition walls that are spaced apart, and an orthographic projection region of a gap region between the first and second partition walls onto the base cushion layer is located at a region where the recessed portion is located; and both orthographic projection regions of the first and second partition walls onto the base cushion layer partially overlap with the recessed portion region; and both the source-drain layer and the active layer are located on the side of the base insulating layer away from the base cushion layer.
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