Invention Grant
- Patent Title: Read-out circuits of image sensors and image sensors including the same
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Application No.: US15415273Application Date: 2017-01-25
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Publication No.: US10334193B2Publication Date: 2019-06-25
- Inventor: Kyu-Ik Cho , Ji-Yong Kim , Jae-Jung Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2016-0015505 20160211; KR10-2017-0004055 20170111
- Main IPC: H04N5/369
- IPC: H04N5/369 ; H04N5/357 ; H04N5/378 ; H03K4/50 ; H04N5/3745

Abstract:
A read-out circuit of an image sensor includes a ramp signal generator, a bias voltage generator and a conversion circuit. The ramp signal generates a ramp signal that linearly varies at a constant slope. The bias voltage generator generates a bias voltage based on a power supply voltage having a first noise component. The conversion circuit generates a reference voltage based on the bias voltage and the ramp signal, and performs an analog-to-digital conversion on an analog signal from a pixel to generate a digital signal corresponding to the analog signal. The analog signal has second noise component. The bias voltage generator adjusts an alternating current component included in the bias voltage such that a magnitude of a third noise component added to the reference voltage is substantially the same as a magnitude of the second noise component.
Public/Granted literature
- US20170237914A1 READ-OUT CIRCUITS OF IMAGE SENSORS AND IMAGE SENSORS INCLUDING THE SAME Public/Granted day:2017-08-17
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