Invention Grant
- Patent Title: Method to improve transistor matching
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Application No.: US15495016Application Date: 2017-04-24
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Publication No.: US10339251B2Publication Date: 2019-07-02
- Inventor: Ashesh Parikh , Chi-Chien Ho , Thomas John Smelko , Rajni J. Aggarwal
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L21/66 ; H01L21/8234

Abstract:
A method to adjust transistor gate geometries in a design data base to compensate for transistor-to-transistor active overlap of gate differences and to form a reticle. A method to adjust transistor geometries in a design data base to compensate for transistor-to-transistor active overlap of gate differences and to compensate for transistor turn on voltage drop off where the transistor gate crosses the isolation/active interface.
Public/Granted literature
- US20170228488A1 METHOD TO IMPROVE TRANSISTOR MATCHING Public/Granted day:2017-08-10
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