Invention Grant
- Patent Title: Method and system for selection of metrology targets for use in focus and dose applications
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Application No.: US14270991Application Date: 2014-05-06
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Publication No.: US10340196B1Publication Date: 2019-07-02
- Inventor: Roie Volkovich , Hiroyuki Kurita , Yoel Feler
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Suiter Swantz pc llo
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
The selection of metrology targets for use in a focus and dose application includes providing a FEM wafer including a plurality of fields with one or more metrology targets, measuring the one or more metrology targets within each field of the FEM wafer, performing a regression process on measurement results from the one or more selected fields of the FEM wafer to determine one or more DOI values for the one or more metrology targets of the one or more selected fields, calculating one or more diagnostic parameters for the one or more metrology targets of the one or more selected fields based on the regression process performed on the one or more selected fields of the FEM wafer, and identifying a set of candidate metrology targets based on the one or more calculated diagnostic parameters of the one or more selected fields of the FEM wafer.
Information query
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