Estimation of asymmetric aberrations

    公开(公告)号:US10824082B2

    公开(公告)日:2020-11-03

    申请号:US16305629

    申请日:2018-10-30

    摘要: Metrology targets, target design methods and menology measurement methods are provided, which estimate the effects of asymmetric aberrations, independently or in conjunction with metrology overlay estimations. Targets comprise one or more pairs of segmented periodic structures having a same coarse pitch, a same 1:1 line to space ratio and segmented into fine elements at a same fine pitch, wherein the segmented periodic structures differ from each other in that one thereof lacks at least one of its corresponding fine elements and/or in that one thereof comprises two groups of the fine elements which are separated from each other by a multiple of the fine pitch. The missing element(s) and/or central gap enable deriving the estimation of aberration effects from measurements of the corresponding segmented periodic structures. The fine pitches may be selected to correspond to the device fine pitches in the corresponding layer.

    ESTIMATION OF ASYMMETRIC ABERRATIONS
    2.
    发明申请

    公开(公告)号:US20200133135A1

    公开(公告)日:2020-04-30

    申请号:US16305629

    申请日:2018-10-30

    IPC分类号: G03F7/20

    摘要: Metrology targets, target design methods and menology measurement methods are provided, which estimate the effects of asymmetric aberrations, independently or in conjunction with metrology overlay estimations. Targets comprise one or more pairs of segmented periodic structures having a same coarse pitch, a same 1:1 line to space ratio and segmented into fine elements at a same fine pitch, wherein the segmented periodic structures differ from each other in that one thereof lacks at least one of its corresponding fine elements and/or in that one thereof comprises two groups of the fine elements which are separated from each other by a multiple of the fine pitch. The missing element(s) and/or central gap enable deriving the estimation of aberration effects from measurements of the corresponding segmented periodic structures. The fine pitches may be selected to correspond to the device fine pitches in the corresponding layer.

    Reduction or elimination of pattern placement error in metrology measurements

    公开(公告)号:US11537043B2

    公开(公告)日:2022-12-27

    申请号:US17161645

    申请日:2021-01-28

    摘要: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.

    Determining the impacts of stochastic behavior on overlay metrology data

    公开(公告)号:US10901325B2

    公开(公告)日:2021-01-26

    申请号:US15763662

    申请日:2018-02-27

    摘要: Methods are provided for designing metrology targets and estimating the uncertainty error of metrology metric values with respect to stochastic noise such as line properties (e.g., line edge roughness, LER). Minimal required dimensions of target elements may be derived from analysis of the line properties and uncertainty error of metrology measurements, by either CDSEM (critical dimension scanning electron microscopy) or optical systems, with corresponding targets. The importance of this analysis is emphasized in view of the finding that stochastic noise may have increased importance with when using more localized models such as CPE (correctables per exposure). The uncertainty error estimation may be used for target design, enhancement of overlay estimation and evaluation of measurement reliability in multiple contexts.

    Reticle optimization algorithms and optimal target design

    公开(公告)号:US10754261B2

    公开(公告)日:2020-08-25

    申请号:US15571427

    申请日:2017-06-06

    IPC分类号: G03F7/20 G03F1/44

    摘要: Metrology target designs on the reticle and on the wafer, and target design and processing methods are provided. Target designs comprise coarse pitched periodic structures having fine pitched sub-elements, which vary in sub-element CD and/or height, an orthogonal periodic structure, perpendicular to the measurement direction, with an orthogonal unresolved pitch among periodically recurring bars, which provide a calibration parameter for achieving well-printed targets. Orthogonal periodic structures may be designed on the reticle and be unresolved, or be applied in cut patterns on the process layer, with relatively low sensitivity to the cut layer overlay. Designed targets may be used for overlay metrology as well as for measuring process parameters such as scanner aberrations and pitch walk.

    Near field metrology
    8.
    发明授权

    公开(公告)号:US10261014B2

    公开(公告)日:2019-04-16

    申请号:US14583447

    申请日:2014-12-26

    摘要: Metrology systems and methods are provided herein, which comprise an optical element that is positioned between an objective lens of the system and a target. The optical element is arranged to enhance evanescent modes of radiation reflected by the target. Various configurations are disclosed: the optical element may comprise a solid immersion lens, a combination of Moiré-elements and solid immersion optics, dielectric-metal-dielectric stacks of different designs, and resonating elements to amplify the evanescent modes of illuminating radiation. The metrology systems and methods are configurable to various metrology types, including imaging and scatterometry methods.

    NEAR FIELD METROLOGY
    9.
    发明申请
    NEAR FIELD METROLOGY 审中-公开
    近场计量学

    公开(公告)号:US20150198524A1

    公开(公告)日:2015-07-16

    申请号:US14583447

    申请日:2014-12-26

    IPC分类号: G01N21/47

    摘要: Metrology systems and methods are provided herein, which comprise an optical element that is positioned between an objective lens of the system and a target. The optical element is arranged to enhance evanescent modes of radiation reflected by the target. Various configurations are disclosed: the optical element may comprise a solid immersion lens, a combination of Moiré-elements and solid immersion optics, dielectric-metal-dielectric stacks of different designs, and resonating elements to amplify the evanescent modes of illuminating radiation. The metrology systems and methods are configurable to various metrology types, including imaging and scatterometry methods.

    摘要翻译: 本文提供的计量系统和方法包括位于系统的物镜和目标之间的光学元件。 光学元件布置成增强目标反射的辐射消散模式。 公开了各种配置:光学元件可以包括固体浸没透镜,莫尔元件和固体浸没光学元件的组合,不同设计的介电金属 - 电介质叠层以及用于放大照明辐射的渐逝模式的谐振元件。 计量系统和方法可配置为各种计量类型,包括成像和散射方法。

    REDUCTION OR ELIMINATION OF PATTERN PLACEMENT ERROR IN METROLOGY MEASUREMENTS

    公开(公告)号:US20230099105A1

    公开(公告)日:2023-03-30

    申请号:US18076375

    申请日:2022-12-06

    摘要: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.