- 专利标题： SRAM with multiple power domains
-
申请号： US16049078申请日： 2018-07-30
-
公开(公告)号： US10347328B2公开(公告)日： 2019-07-09
- 发明人: Christophe J. Chevallier , Scott Hanson
- 申请人： Ambiq Micro, Inc.
- 申请人地址： US TX Austin
- 专利权人： Ambiq Micro, Inc.
- 当前专利权人： Ambiq Micro, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Hunt Pennington Kumar & Dula PLLC
- 代理商 Artie Pennington
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C11/419 ; G11C11/418 ; G11C5/14
摘要：
An SRAM facility adapted to power an address path using a first developed supply voltage and to power a data path using a second developed supply voltage, the first and second developed power supplies being separate, distinct, and different. The SRAM facility includes a power supply facility or a voltage supply facility adapted to develop the first and second supply voltages.
公开/授权文献
- US20180336945A1 SRAM WITH MULTIPLE POWER DOMAINS 公开/授权日：2018-11-22
信息查询
