- 专利标题： Transistor and fabrication method thereof
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申请号： US15435557申请日： 2017-02-17
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公开(公告)号： US10347493B2公开(公告)日： 2019-07-09
- 发明人: Yong Li
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- 申请人地址： CN Shanghai CN Beijing
- 专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- 当前专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- 当前专利权人地址： CN Shanghai CN Beijing
- 代理机构： Anova Law Group, PLLC
- 优先权： CN201610231449 20160414
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/66 ; H01L21/8238 ; H01L29/423 ; H01L29/78 ; H01L27/092 ; H01L21/02 ; H01L21/768 ; H01L29/49
摘要：
A transistor and a method of forming the transistor are provided. The method includes forming a first interlayer dielectric layer on a substrate, forming an opening through the first interlayer dielectric layer, and forming a work function layer over side surfaces and a bottom of the opening. The method further includes forming a gate electrode layer over the work function layer, removing at least a portion of the work function layer over side surfaces of the gate electrode layer to form grooves, and forming a protection layer in the grooves.
公开/授权文献
- US20170301545A1 TRANSISTOR AND FABRICATION METHOD THEREOF 公开/授权日：2017-10-19
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