- 专利标题： Semiconductor device that facilitates a reduction in the occurrences of cracking in a semiconductor layer accompanying thermal stress
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申请号： US14956977申请日： 2015-12-02
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公开(公告)号： US10347725B2公开(公告)日： 2019-07-09
- 发明人: Akihiko Nobukuni , Hirofumi Oki , Yoshifumi Tomomatsu
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Studebaker & Brackett PC
- 优先权： JP2015-125832 20150623
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L29/417 ; H01L29/739 ; H01L29/74 ; H01L29/78 ; H01L29/06 ; H01L29/16 ; H01L29/20
摘要：
An emitter electrode includes a first electrode layer, a second electrode layer, and a third electrode layer. The first to third electrode layers are laid in this order on an emitter layer. A solder layer is further laid on the third electrode layer. The first electrode layer covers the emitter layer and a gate oxide film in a front surface of a semiconductor chip. A first electroconductive material forming the first electrode layer has AlSi as its main component. A second electroconductive material forming the second electrode layer has a linear expansion coefficient different from that of the first electroconductive material and is lower in mechanical strength than the first electroconductive material. A third electroconductive material constituting the third electrode layer has a linear expansion coefficient different from that of the first electroconductive material and has solder wettability higher than that of the first electrode layer.
公开/授权文献
- US20160380068A1 SEMICONDUCTOR DEVICE 公开/授权日：2016-12-29
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