公开(公告)号：US10347725B2

公开(公告)日：2019-07-09

申请号：US14956977

申请日：2015-12-02

申请人： Mitsubishi Electric Corporation

发明人： Akihiko Nobukuni ,  Hirofumi Oki ,  Yoshifumi Tomomatsu

IPC分类号： H01L29/45 ,  H01L29/417 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20

摘要： An emitter electrode includes a first electrode layer, a second electrode layer, and a third electrode layer. The first to third electrode layers are laid in this order on an emitter layer. A solder layer is further laid on the third electrode layer. The first electrode layer covers the emitter layer and a gate oxide film in a front surface of a semiconductor chip. A first electroconductive material forming the first electrode layer has AlSi as its main component. A second electroconductive material forming the second electrode layer has a linear expansion coefficient different from that of the first electroconductive material and is lower in mechanical strength than the first electroconductive material. A third electroconductive material constituting the third electrode layer has a linear expansion coefficient different from that of the first electroconductive material and has solder wettability higher than that of the first electrode layer.

公开(公告)号：US09972618B2

公开(公告)日：2018-05-15

申请号：US15325465

申请日：2014-12-17

申请人： Mitsubishi Electric Corporation

发明人： Hideki Haruguchi ,  Yoshifumi Tomomatsu

IPC分类号： H01L29/739 ,  H01L29/08 ,  H01L27/07 ,  H01L29/423 ,  H01L29/10 ,  H01L29/861

CPC分类号： H01L27/0716 ,  H01L27/0207 ,  H01L27/0727 ,  H01L29/0834 ,  H01L29/1004 ,  H01L29/1095 ,  H01L29/4238 ,  H01L29/739 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/861

摘要： An IGBT includes an n-type drift layer, a p-type base layer and an n-type emitter layer formed on an upper surface of the n-type drift layer, and a p-type collector layer on a lower surface of the n-type drift layer. A FWD includes the n-type drift layer, a p-type anode layer formed on the upper surface of the n-type drift layer and an n-type cathode layer formed on the lower surface of the n-type drift layer. A p-type well is formed on the upper surface of the n-type drift layer in a wiring region and a termination region. A wiring is formed on the p-type well in the wiring region. The p-type well has a higher impurity concentration and is deeper than the p-type anode layer. The p-type well is not formed directly above the n-type cathode layer and is separate from a region directly above the n-type cathode layer.