公开(公告)号：US10347725B2

公开(公告)日：2019-07-09

申请号：US14956977

申请日：2015-12-02

申请人： Mitsubishi Electric Corporation

发明人： Akihiko Nobukuni ,  Hirofumi Oki ,  Yoshifumi Tomomatsu

IPC分类号： H01L29/45 ,  H01L29/417 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20

摘要： An emitter electrode includes a first electrode layer, a second electrode layer, and a third electrode layer. The first to third electrode layers are laid in this order on an emitter layer. A solder layer is further laid on the third electrode layer. The first electrode layer covers the emitter layer and a gate oxide film in a front surface of a semiconductor chip. A first electroconductive material forming the first electrode layer has AlSi as its main component. A second electroconductive material forming the second electrode layer has a linear expansion coefficient different from that of the first electroconductive material and is lower in mechanical strength than the first electroconductive material. A third electroconductive material constituting the third electrode layer has a linear expansion coefficient different from that of the first electroconductive material and has solder wettability higher than that of the first electrode layer.