Invention Grant
- Patent Title: Semiconductor device and method of producing the same
-
Application No.: US15459658Application Date: 2017-03-15
-
Publication No.: US10347770B2Publication Date: 2019-07-09
- Inventor: Shinichi Ushikura , Ayumu Sato
- Applicant: JOLED Inc.
- Applicant Address: JP Tokyo
- Assignee: JOLED INC.
- Current Assignee: JOLED INC.
- Current Assignee Address: JP Tokyo
- Agency: Hauptman Ham, LLP
- Priority: JP2016-052814 20160316
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L29/51 ; H01L21/02 ; H01L23/31
Abstract:
According to one embodiment, a semiconductor device includes an insulating substrate, an oxide semiconductor layer, a gate insulating film, a gate electrode, a first insulating film and a second insulating film. The oxide semiconductor layer is provided on the insulating substrate and includes first and second low-resistance regions and a high-resistance region between the first and second low-resistance regions. The gate insulating film is provided on the high-resistance region of the oxide semiconductor layer. The gate electrode is provided on the gate insulating film. The first insulating film is provided above the gate electrode, gate insulating film and first and second low-resistance regions of the oxide semiconductor layer, and contains at least fluorine. The second insulating film is provided on the first insulating film, and contains aluminum.
Public/Granted literature
- US20170271518A1 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME Public/Granted day:2017-09-21
Information query
IPC分类:
