公开(公告)号：US09178074B2

公开(公告)日：2015-11-03

申请号：US14202852

申请日：2014-03-10

Applicant: Joled Inc.

Inventor： Yasuhiro Terai ,  Takahide Ishii ,  Ayumu Sato

IPC: H01L27/00 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L27/13

CPC classification number: H01L29/7869 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265

Abstract: Provided is a semiconductor device that includes: a transistor; an oxide semiconductor film; a first conductive film electrically connected to the oxide semiconductor film; and a first insulating film provided between the first conductive film and the oxide semiconductor film.

Abstract translation: 提供一种半导体器件，其包括：晶体管; 氧化物半导体膜; 与氧化物半导体膜电连接的第一导电膜; 以及设置在第一导电膜和氧化物半导体膜之间的第一绝缘膜。

公开(公告)号：US09780154B2

公开(公告)日：2017-10-03

申请号：US14638568

申请日：2015-03-04

Applicant: Joled Inc.

Inventor： Ayumu Sato ,  Takashi Maruyama ,  Takahide Ishii

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/326 ,  H01L27/3202 ,  H01L27/3248 ,  H01L27/3272 ,  H01L51/5218 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2251/568

Abstract: A display device of the present disclosure includes a plurality of pixels, in which a pixel includes a light-emitting element, a drive circuit which has a thin film transistor driving the light-emitting element, and a coupling unit which connects the light-emitting element and the drive circuit to each other, the light-emitting element has a configuration in which an organic layer including a light-emitting layer is interposed between a transparent electrode and a reflective electrode, the thin film transistor has a configuration which includes a semiconductor layer, an insulation layer, a first electrode layer, and a second electrode layer, and the coupling unit includes a metal layer which is thinner than the first electrode and the second electrode of the thin film transistor the metal layer being disposed in one portion of the coupling unit.

公开(公告)号：US10347770B2

公开(公告)日：2019-07-09

申请号：US15459658

申请日：2017-03-15

Applicant: JOLED Inc.

Inventor： Shinichi Ushikura ,  Ayumu Sato

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/51 ,  H01L21/02 ,  H01L23/31

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, an oxide semiconductor layer, a gate insulating film, a gate electrode, a first insulating film and a second insulating film. The oxide semiconductor layer is provided on the insulating substrate and includes first and second low-resistance regions and a high-resistance region between the first and second low-resistance regions. The gate insulating film is provided on the high-resistance region of the oxide semiconductor layer. The gate electrode is provided on the gate insulating film. The first insulating film is provided above the gate electrode, gate insulating film and first and second low-resistance regions of the oxide semiconductor layer, and contains at least fluorine. The second insulating film is provided on the first insulating film, and contains aluminum.