Invention Grant
- Patent Title: Switched capacitor circuit structure with method of controlling source-drain resistance across same
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Application No.: US15213529Application Date: 2016-07-19
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Publication No.: US10348243B2Publication Date: 2019-07-09
- Inventor: Chi Zhang , Arul Balasubramaniyan
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent David Cain
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H03B5/12 ; H03J5/00

Abstract:
Embodiments of the present disclosure provide a circuit structure including: a switching transistor including a gate terminal, a back-gate terminal, a source terminal, and a drain terminal; a biasing node coupled to the back-gate terminal of the switching transistor, the biasing node being alternately selectable between an on state and an off state; a first capacitor source-coupled to the switching transistor; a second capacitor drain-coupled to the switching capacitor; and a first enabling node source-coupled to the switching transistor, the first enabling node being alternately selectable between an on state and an off state.
Public/Granted literature
- US20180026580A1 SWITCHED CAPACITOR CIRCUIT STRUCTURE WITH METHOD OF CONTROLLING SOURCE-DRAIN RESISTANCE ACROSS SAME Public/Granted day:2018-01-25
Information query
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