Invention Grant
- Patent Title: Device and method for on-chip mechanical stress sensing
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Application No.: US15649934Application Date: 2017-07-14
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Publication No.: US10352792B2Publication Date: 2019-07-16
- Inventor: Umidjon Nurmetov , Ralf Peter Brederlow , Baher Haroun
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Michael A. Davis, Jr.; Charles A. Brill; Frank D. Cimino
- Main IPC: G01L1/22
- IPC: G01L1/22 ; H01L27/06 ; G01L1/16 ; H01L29/84 ; G01L5/16 ; H01L27/22 ; G01L25/00 ; H01L29/8605

Abstract:
An integrated circuit (IC) chip includes a substrate of a piezo-electric material having a first resistivity coefficient associated with a first direction that is longitudinal to a first crystal axis and a second resistivity coefficient associated with a second direction that is transverse to the first crystal axis. The first and second resistivity coefficients have opposite signs. The IC chip also includes a first stress sensing element formed in the substrate and coupled to pass a first current therethrough. The first stress sensing element includes a first resistor aligned such that the major direction of current flow through the first resistor is in the first direction and a second resistor coupled in series with the first resistor and aligned such that the major direction of current flow through the second resistor is in the second direction. A ratio of the resistance of the second resistor to the resistance of the first resistor is equal to a value α, where α is equal to the ratio of the first resistivity coefficient to the second resistivity coefficient.
Public/Granted literature
- US20180231424A1 DEVICE AND METHOD FOR ON-CHIP MECHANICAL STRESS SENSING Public/Granted day:2018-08-16
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