Invention Grant
- Patent Title: Dual mode memory system and method of working the same
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Application No.: US15691729Application Date: 2017-08-30
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Publication No.: US10354711B2Publication Date: 2019-07-16
- Inventor: Yuanli Ding , Zhibiao Zhou
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: G11C11/22
- IPC: G11C11/22 ; H01L29/786 ; H01L29/49
Abstract:
A dual mode memory system is provided in the present invention, which includes a memory cell array with a plurality of oxide-semiconductor field effect transistors, each said oxide-semiconductor field effect transistor has a ferroelectric layer in the bottom gate to modulate the bottom gate bias voltage according to the polarization voltages provided by the dual mode control unit.
Public/Granted literature
- US20190066750A1 DUAL MODE MEMORY SYSTEM AND METHOD OF WORKING THE SAME Public/Granted day:2019-02-28
Information query
