Invention Grant
- Patent Title: Sputtering system and method for forming a metal layer on a semiconductor device
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Application No.: US15701192Application Date: 2017-09-11
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Publication No.: US10354871B2Publication Date: 2019-07-16
- Inventor: Stacey Joy Kennerly , Victor Torres , David Lilienfeld , Robert Dwayne Gossman , Gregory Keith Dudoff
- Applicant: General Electric Company
- Applicant Address: US NY Schenectady
- Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee Address: US NY Schenectady
- Agency: Fletcher Yoder, P.C
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/04 ; H01L21/768 ; H01L23/532 ; C23C14/16 ; H01L21/285
Abstract:
A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering step includes at least one sputtering parameter that is different from a corresponding sputtering parameter of another sputtering step. The surface of the semiconductor device includes a dielectric layer having a plurality of openings formed through the dielectric layer.
Public/Granted literature
- US20190080906A1 SPUTTERING SYSTEM AND METHOD FOR FORMING A METAL LAYER ON A SEMICONDUCTOR DEVICE Public/Granted day:2019-03-14
Information query
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