- 专利标题： Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device structures
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申请号： US14078373申请日： 2013-11-12
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公开(公告)号： US10354892B2公开(公告)日： 2019-07-16
- 发明人: Steven Verhaverbeke , Han-Wen Chen , Roman Gouk
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson + Sheridan LLP
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01L21/677 ; H01L21/02 ; B08B3/08 ; B08B7/00
摘要：
Embodiments of the invention generally relate to a method of cleaning a substrate and a substrate processing apparatus that is configured to perform the method of cleaning the substrate. More specifically, embodiments of the present invention relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention relate to a substrate processing apparatus that allows for cleaning of the substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate.
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