公开(公告)号：US11927885B2

公开(公告)日：2024-03-12

申请号：US17883422

申请日：2022-08-08

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Jean Delmas ,  Steven Verhaverbeke ,  Chintan Buch

IPC: G03F7/00 ,  B29C45/37 ,  B29C59/02 ,  B29K23/00 ,  H01L21/027 ,  H01L21/768

CPC classification number: G03F7/0002 ,  B29C45/372 ,  B29C59/022 ,  H01L21/0274 ,  H01L21/76817 ,  B29K2023/16

Abstract: An imprint lithography stamp includes a stamp body having a patterned surface and formed from a fluorinated ethylene propylene copolymer. The imprint lithography stamp further includes a backing plate with a plurality of through-holes with portions of the stamp body extending into the through-holes to adhere the stamp body to the backing plate. The patterned surface of the stamp body has a plurality of protrusions extending from the stamp body, which are used to form high aspect ratio features at high processing temperatures. A mold design for forming the imprint lithography stamp and an injection molding process for forming the imprint lithography stamp are also provided.

公开(公告)号：US11454884B2

公开(公告)日：2022-09-27

申请号：US16849393

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Jean Delmas ,  Steven Verhaverbeke ,  Chintan Buch

IPC: G03F7/00 ,  H01L21/027 ,  H01L21/768

Abstract: An imprint lithography stamp includes a stamp body having a patterned surface and formed from a fluorinated ethylene propylene copolymer. The imprint lithography stamp further includes a backing plate with a plurality of through-holes with portions of the stamp body extending into the through-holes to adhere the stamp body to the backing plate. The patterned surface of the stamp body has a plurality of protrusions extending from the stamp body, which are used to form high aspect ratio features at high processing temperatures. A mold design for forming the imprint lithography stamp and an injection molding process for forming the imprint lithography stamp are also provided.

公开(公告)号：US10283344B2

公开(公告)日：2019-05-07

申请号：US15325419

申请日：2015-07-10

Applicant: Applied Materials, Inc.

Inventor： Steven Verhaverbeke ,  Han-Wen Chen ,  Roman Gouk ,  Kurtis Leschkies

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: The present disclosure generally relates to apparatus and methods for forming a low-k dielectric material on a substrate. The method includes various substrate processing steps utilizing a wet processing chamber, a solvent exchange chamber, and a supercritical fluid chamber. More specifically, a dielectric material in an aqueous solution may be deposited on the substrate and a solvent exchange process may be performed to prepare the substrate for a supercritical drying process. During the supercritical drying process, liquids present in the solution and remaining on the substrate from the solvent exchange process are removed via sublimation during the supercritical drying process. The resulting dielectric material formed on the substrate may be considered a silica aerogel which exhibits a very low k-value.

公开(公告)号：US10233538B2

公开(公告)日：2019-03-19

申请号：US15193307

申请日：2016-06-27

Applicant: Applied Materials, Inc.

Inventor： Martin A. Hilkene ,  Roman Gouk ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev

IPC: C23C14/58 ,  C23C14/48 ,  C23C14/04 ,  C23C14/06 ,  G11B5/62 ,  G11B5/85 ,  G11B5/851 ,  G11B5/858

Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.

公开(公告)号：US08852962B2

公开(公告)日：2014-10-07

申请号：US13659555

申请日：2012-10-24

Applicant: Applied Materials, Inc.

Inventor： Steven Verhaverbeke ,  Roman Gouk ,  Li-Qun Xia ,  Mei-yee Shek ,  Yu Jin

IPC: H01L21/02 ,  G11B5/74 ,  G11B5/84 ,  H01L21/67 ,  H01L21/677 ,  H01L21/033 ,  H01F41/34

CPC classification number: H01F41/34 ,  G11B5/743 ,  G11B5/84 ,  H01L21/0332 ,  H01L21/67161 ,  H01L21/67736

Abstract: Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer for use in magnetic media. According to embodiments of the present application, a silicon oxide layer formed by low temperature chemical vapor deposition is used to form a pattern in a hard mask layer, and the patterned hard mask is used to form a patterned magnetic layer by plasma ion implantation.

Abstract translation: 本发明的实施例提供了用于形成用于磁性介质的图案化磁性层的方法和装置。 根据本申请的实施例，使用通过低温化学气相沉积形成的氧化硅层在硬掩模层中形成图案，并且使用图案化的硬掩模通过等离子体离子注入形成图案化的磁性层。

公开(公告)号：US10032624B2

公开(公告)日：2018-07-24

申请号：US15268180

申请日：2016-09-16

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Han-Wen Chen ,  Steven Verhaverbeke ,  Jean Delmas

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/67034 ,  H01L21/6719 ,  H01L21/68728 ,  H01L21/68785

Abstract: A substrate support apparatus is provided. The apparatus includes a circular base plate and one or more spacers disposed about a circumference of the base plate. The spacers may extend from a top surface of the base plate and a ring body may be coupled to the spacers. The ring body may be spaced from the base plate to define apertures between the base plate and the ring body. One or more support posts may be coupled to the base plate and extend therefrom. The support posts may be coupled to the base plate at positions radially inward from an inner surface of the ring body.

公开(公告)号：US09490125B2

公开(公告)日：2016-11-08

申请号：US14758784

申请日：2014-01-06

Applicant: Applied Materials, Inc.

Inventor： Roman Gouk ,  Steven Verhaverbeke

IPC: H01L21/225 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/2254 ,  H01L21/02043 ,  H01L21/02057 ,  H01L21/02101 ,  H01L29/66795 ,  H01L29/66803

Abstract: Methods for forming a conformal dopant monolayer on a substrate are provided. In one embodiment, a method for forming a semi-conductor device on a substrate includes forming a charged layer on a silicon containing surface disposed on a substrate, wherein the charged layer has a first charge, and forming a dopant monolayer on the charged layer, wherein dopants formed in the dopant monolayer include at least one of a group III or group V atoms.

Abstract translation: 提供了在衬底上形成保形掺杂剂单层的方法。 在一个实施例中，在衬底上形成半导体器件的方法包括在设置在衬底上的含硅表面上形成带电层，其中带电层具有第一电荷，并且在带电层上形成掺杂剂单层， 其中在所述掺杂剂单层中形成的掺杂剂包括III族或V族原子中的至少一种。

公开(公告)号：US08986557B2

公开(公告)日：2015-03-24

申请号：US14177893

申请日：2014-02-11

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick ,  Nitin Ingle ,  Roman Gouk ,  Steven Verhaverbeke

IPC: B44C1/22 ,  G11B5/85 ,  G11B5/855

CPC classification number: G11B5/85 ,  G11B5/855

Abstract: Method and apparatus for forming a patterned magnetic substrate are provided. A patterned resist is formed on a magnetically active surface of a substrate. An oxide layer is formed over the patterned resist by a flowable CVD process. The oxide layer is etched to expose portions of the patterned resist. The patterned resist is then etched, using the etched oxide layer as a mask, to expose portions of the magnetically active surface. A magnetic property of the exposed portions of the magnetically active surface is then modified by directing energy through the etched resist layer and the etched oxide layer, which are subsequently removed from the substrate.

Abstract translation: 提供了用于形成图案化磁性基底的方法和装置。 在基板的磁性活性表面上形成图案化的抗蚀剂。 通过可流动的CVD工艺在图案化的抗蚀剂上形成氧化物层。 蚀刻氧化物层以暴露图案化抗蚀剂的部分。 然后使用蚀刻的氧化物层作为掩模蚀刻图案化的抗蚀剂，以暴露磁性活性表面的部分。 然后通过将能量引导通过经蚀刻的抗蚀剂层和经蚀刻的氧化物层（随后从衬底去除）来改变磁性活性表面的暴露部分的磁性。

公开(公告)号：US12087679B2

公开(公告)日：2024-09-10

申请号：US16886704

申请日：2020-05-28

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Kyuil Cho ,  Kurtis Leschkies ,  Roman Gouk ,  Chintan Buch ,  Vincent Dicaprio ,  Bernhard Stonas ,  Jean Delmas

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/14

CPC classification number: H01L23/49838 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49866

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US11881447B2

公开(公告)日：2024-01-23

申请号：US17227867

申请日：2021-04-12

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Kyuil Cho ,  Kurtis Leschkies ,  Roman Gouk ,  Chintan Buch ,  Vincent Dicaprio ,  Bernhard Stonas ,  Jean Delmas

IPC: H01L23/538 ,  H01L23/367 ,  H01L23/498 ,  H01L21/48 ,  H01L23/14

CPC classification number: H01L23/49838 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49866

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.