- 专利标题： FinFETs having strained channels, and methods of fabricating finFETs having strained channels
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申请号： US15180860申请日： 2016-06-13
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公开(公告)号： US10355020B2公开(公告)日： 2019-07-16
- 发明人: Qing Liu , Xiuyu Cai , Ruilong Xie , Chun-chen Yeh
- 申请人： International Business Machines Corporation , GLOBALFOUNDRIES INC. , STMICROELECTRONICS, INC.
- 申请人地址： US NY Armonk US TX Coppell KY Grand Cayman
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC.
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC.
- 当前专利权人地址： US NY Armonk US TX Coppell KY Grand Cayman
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Steven J. Meyers
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L29/417 ; H01L29/66 ; H01L21/8234 ; H01L21/28 ; H01L29/06 ; H01L29/10 ; H01L29/78 ; G06N3/04 ; G10L15/16 ; H01L29/36
摘要：
Techniques and structures for controlling etch-back of a finFET fin are described. One or more layers may be deposited over the fin and etched. Etch-back of a planarization layer may be used to determine a self-limited etch height of one or more layers adjacent the fin and a self-limited etch height of the fin. Strain-inducing material may be formed at regions of the etched fin to induce strain in the channel of a finFET.
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