Invention Grant
- Patent Title: FinFETs having strained channels, and methods of fabricating finFETs having strained channels
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Application No.: US15180860Application Date: 2016-06-13
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Publication No.: US10355020B2Publication Date: 2019-07-16
- Inventor: Qing Liu , Xiuyu Cai , Ruilong Xie , Chun-chen Yeh
- Applicant: International Business Machines Corporation , GLOBALFOUNDRIES INC. , STMICROELECTRONICS, INC.
- Applicant Address: US NY Armonk US TX Coppell KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC.
- Current Assignee Address: US NY Armonk US TX Coppell KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/417 ; H01L29/66 ; H01L21/8234 ; H01L21/28 ; H01L29/06 ; H01L29/10 ; H01L29/78 ; G06N3/04 ; G10L15/16 ; H01L29/36

Abstract:
Techniques and structures for controlling etch-back of a finFET fin are described. One or more layers may be deposited over the fin and etched. Etch-back of a planarization layer may be used to determine a self-limited etch height of one or more layers adjacent the fin and a self-limited etch height of the fin. Strain-inducing material may be formed at regions of the etched fin to induce strain in the channel of a finFET.
Public/Granted literature
- US20160293761A1 FINFETS HAVING STRAINED CHANNELS, AND METHODS OF FABRICATING FINFETS HAVING STRAINED CHANNELS Public/Granted day:2016-10-06
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