Invention Grant
- Patent Title: Magnetic memory cells, semiconductor devices, and methods of formation
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Application No.: US15162119Application Date: 2016-05-23
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Publication No.: US10355044B2Publication Date: 2019-07-16
- Inventor: Gurtej S. Sandhu , Sumeet C. Pandey
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01L43/10 ; H01L43/12 ; H01L43/08

Abstract:
A magnetic cell includes magnetic, secondary oxide, and getter seed regions. During formation, a diffusive species is transferred from a precursor magnetic material to the getter seed region, due to a chemical affinity elicited by a getter species. The depletion of the magnetic material enables crystallization of the depleted magnetic material through crystal structure propagation from a neighboring crystalline material, without interference from the now-enriched getter seed region. This promotes high tunnel magnetoresistance and high magnetic anisotropy strength. Also during formation, another diffusive species is transferred from a precursor oxide material to the getter seed region, due to a chemical affinity elicited by another getter species. The depletion of the oxide material enables lower electrical resistance and low damping in the cell structure. Methods of fabrication and semiconductor devices are also disclosed.
Public/Granted literature
- US20160268337A1 MAGNETIC MEMORY CELLS, SEMICONDUCTOR DEVICES, AND METHODS OF FORMATION Public/Granted day:2016-09-15
Information query
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