Invention Grant
- Patent Title: Polycrystalline diamond sintered/rebonded on carbide substrate containing low tungsten
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Application No.: US15536826Application Date: 2015-11-20
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Publication No.: US10358705B2Publication Date: 2019-07-23
- Inventor: Yahua Bao , Fulong Wang , J. Daniel Belnap , Ronald K. Eyre , Yi Fang
- Applicant: Smith International, Inc.
- Applicant Address: US TX Houston
- Assignee: SMITH INTERNATIONAL, INC.
- Current Assignee: SMITH INTERNATIONAL, INC.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2015/061768 WO 20151120
- International Announcement: WO2016/099798 WO 20160623
- Main IPC: B22F3/14
- IPC: B22F3/14 ; C22C1/10 ; C22C26/00 ; E21B10/573 ; B22F5/00

Abstract:
A method of forming a polycrystalline diamond cutting element includes assembling a diamond material, a substrate, and a source of catalyst material or infiltrant material distinct from the substrate, the source of catalyst material or infiltrant material being adjacent to the diamond material to form an assembly. The substrate includes an attachment material including a refractory metal. The assembly is subjected to a first high-pressure/high temperature condition to cause the catalyst material or infiltrant material to melt and infiltrate into the diamond material and subjected to a second high-pressure/high temperature condition to cause the attachment material to melt and infiltrate a portion of the infiltrated diamond material to bond the infiltrated diamond material to the substrate.
Public/Granted literature
- US20180044764A1 POLYCRYSTALLINE DIAMOND SINTERED/REBONDED ON CARBIDE SUBSTRATE CONTAINING LOW TUNGSTEN Public/Granted day:2018-02-15
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