摘要:
Thermally stable diamond constructions comprise a diamond body having a plurality of bonded diamond crystals, a plurality of interstitial regions disposed among the crystals, and a substrate attached to the body. The body includes a working surface and a side surface extending away from the working surface to the substrate. The body comprises a first region adjacent the side surface that is substantially free of a catalyst material and that extends a partial depth into the diamond body. The first region can further extend to at least a portion of the working surface and a partial depth therefrom into the diamond body. The diamond body can be formed from natural diamond grains and/or a mixture of natural and synthetic diamond grains. A surface of the diamond body is treated to provide the first region, and before treatment is finished to an approximate final dimension.
摘要:
A method of forming a cutting element may include placing a plurality of diamond particles adjacent to a substrate in a reaction cell; and subjecting the plurality of diamond particles to high pressure high temperature conditions to form a polycrystalline diamond body; wherein the polycrystalline diamond body comprises a cutting face area to thickness ratio ranging from 60:16 to 500:5; and wherein the polycrystalline diamond body has at least one dimension greater than 8 mm
摘要:
A method of loaning a diamond compact includes adding an additive material to a tungsten carbide substrate, the additive material including a transition metal carbide other than tungsten carbide, placing a diamond body adjacent to an interface surface of the tungsten carbide substrate, and subjecting the diamond body and the tungsten carbide substrate to a high pressure high temperature bonding process to bond the diamond body to the tungsten carbide substrate.
摘要:
A method of forming a cutting element may include subjecting a first press containing at least a diamond powder-containing container and a volume of a high melting temperature non-reactive material to a first high pressure high temperature sintering condition to form a sintered polycrystalline diamond wafer including a diamond matrix of diamond grains bonded together and a plurality of interstitial spaces between the bonded together diamond grains; and subjecting a second press containing the sintered polycrystalline diamond wafer and a substrate to a second high temperature high pressure condition, thereby attaching the wafer to the substrate to form a cutting element having a polycrystalline diamond layer on the substrate.
摘要:
A method of forming a polycrystalline diamond cutting element includes assembling a diamond material, a substrate, and a source of catalyst material or infiltrant material distinct from the substrate, the source of catalyst material or infiltrant material being adjacent to the diamond material to form an assembly. The substrate includes an attachment material including a refractory metal. The assembly is subjected to a first high-pressure/high temperature condition to cause the catalyst material or infiltrant material to melt and infiltrate into the diamond material and subjected to a second high-pressure/high temperature condition to cause the attachment material to melt and infiltrate a portion of the infiltrated diamond material to bond the infiltrated diamond material to the substrate.
摘要:
A method of forming a cutting element may include placing a plurality of diamond particles adjacent to a substrate in a reaction cell and subjecting the plurality of diamond particles to high pressure high temperature conditions to form a polycrystalline diamond body. The polycrystalline diamond body may include a cutting face area to thickness ratio ranging from 60:16 to 500:5. The polycrystalline diamond body may have at least one dimension greater than 8 mm.
摘要:
A method of forming a polycrystalline diamond cutting element includes assembling a diamond material, a substrate, and a source of catalyst material or infiltrant material distinct from the substrate, the source of catalyst material or infiltrant material being adjacent to the diamond material to form an assembly. The substrate includes an attachment material including a refractory metal. The assembly is subjected to a first high-pressure/high temperature condition to cause the catalyst material or infiltrant material to melt and infiltrate into the diamond material and subjected to a second high-pressure/high temperature condition to cause the attachment material to melt and infiltrate a portion of the infiltrated diamond material to bond the infiltrated diamond material to the substrate.
摘要:
A cutting element may be formed by placing a plurality of diamond particles adjacent to a substrate in a reaction cell and subjecting the plurality of diamond particles to high pressure high temperature conditions to form a polycrystalline diamond body. The polycrystalline diamond body may have a cutting face area to thickness ratio ranging from 60:16 to 500:5 and at least one dimension greater than 8 mm.
摘要:
A method of forming a cutting element may include subjecting a first press containing at least a diamond powder-containing container and a volume of a high melting temperature non-reactive material to a first high pressure high temperature sintering condition to form a sintered polycrystalline diamond wafer including a diamond matrix of diamond grains bonded together and a plurality of interstitial spaces between the bonded together diamond grains; and subjecting a second press containing the sintered polycrystalline diamond wafer and a substrate to a second high temperature high pressure condition, thereby attaching the wafer to the substrate to form a cutting element having a polycrystalline diamond layer on the substrate.
摘要:
A method for forming a diamond body includes placing a thermally stable polycrystalline diamond body and a first substrate into an enclosure, the thermally stable polycrystalline diamond body comprising a plurality of bonded diamond crystals and a plurality of interstitial regions between the bonded diamond crystals, the interstitial regions being substantially free of a catalyst material, heating the thermally stable polycrystalline diamond body and the first substrate to remove residual materials from the thermally stable polycrystalline diamond body, subjecting the thermally stable polycrystalline diamond body and the first substrate to a vacuum for evacuating such residual material, and pressing under high temperature the enclosure, the thermally stable polycrystalline diamond body and the first substrate while maintaining a vacuum in the enclosure to bond the thermally stable polycrystalline diamond body to the substrate.