Invention Grant
- Patent Title: Memory system and method for wear-leveling by swapping memory cell groups
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Application No.: US15597866Application Date: 2017-05-17
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Publication No.: US10360157B2Publication Date: 2019-07-23
- Inventor: Dong-Gun Kim , Yong-Ju Kim , Sang-Gu Jo , Do-Sun Hong
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0082572 20160630
- Main IPC: G06F12/1027
- IPC: G06F12/1027 ; G06F12/1009

Abstract:
A memory system includes a memory device including a memory block, the memory block including a plurality of memory cell groups, an address translator that maps a logical address of a data to a physical address of the memory block, and a controller configured to divide the plurality of memory cell groups into a plurality of first memory cell groups and at least one second memory cell group, and control the address translator so that the address translator maps a logical address of a data to a physical address of the first memory cell groups of the memory block and not in the at least one second memory cell group and switches the at least one second memory cell group with a selected first memory cell group among the plurality of the first memory cell groups when a predetermined period of time elapses.
Public/Granted literature
- US20180004677A1 MEMORY SYSTEM AND METHOD FOR OPERATING THE SAME Public/Granted day:2018-01-04
Information query
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