Invention Grant
- Patent Title: Semiconductor device having contacts with varying widths
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Application No.: US15820509Application Date: 2017-11-22
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Publication No.: US10361159B2Publication Date: 2019-07-23
- Inventor: Jong Ho You , Sang Young Kim , Byung Chan Ryu
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2017-0042971 20170403
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/82 ; H01L29/41 ; H01L29/66 ; H01L29/78 ; H01L23/528 ; H01L23/522 ; H01L29/417 ; H01L21/768 ; H01L29/45 ; H01L21/8234 ; H01L23/532

Abstract:
A semiconductor device includes a substrate having a plurality of fins protruding therefrom and an active region on the fins. The device further includes a contact including a conductive region having a concave portion defining an upper portion and a lower portion of the conductive region, an interlayer insulating layer on the active region, and a side insulating layer interposed between the interlayer insulating layer and the lower portion of the conductive region.
Public/Granted literature
- US20180286808A1 SEMICONDUCTOR DEVICE HAVING CONTACTS WITH VARYING WIDTHS Public/Granted day:2018-10-04
Information query
IPC分类: