RF sensor in stacked transistors
Abstract:
An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.
Public/Granted literature
Information query
Patent Agency Ranking
0/0