Invention Grant
- Patent Title: RF sensor in stacked transistors
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Application No.: US16264186Application Date: 2019-01-31
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Publication No.: US10361696B1Publication Date: 2019-07-23
- Inventor: Bernd Schleicher , Winfried Bakalski , Ruediger Bauder , Valentyn Solomko
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K17/687

Abstract:
An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.
Public/Granted literature
- US20190245533A1 RF SENSOR IN STACKED TRANSISTORS Public/Granted day:2019-08-08
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