Invention Grant
- Patent Title: Integrating diverse sensors in a single semiconductor device
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Application No.: US14861886Application Date: 2015-09-22
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Publication No.: US10364140B2Publication Date: 2019-07-30
- Inventor: Lianjun Liu , David J. Monk
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Mary Jo Bertani
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00 ; H01L43/02 ; H01L43/12 ; G01L9/00

Abstract:
In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.
Public/Granted literature
- US20170081174A1 INTEGRATING DIVERSE SENSORS IN A SINGLE SEMICONDUCTOR DEVICE Public/Granted day:2017-03-23
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