MEMS SENSOR DEVICE WITH MULTI-STIMULUS SENSING AND METHOD OF FABRICATION
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    发明申请
    MEMS SENSOR DEVICE WITH MULTI-STIMULUS SENSING AND METHOD OF FABRICATION 审中-公开
    具有多刺激感测的MEMS传感器装置和制造方法

    公开(公告)号:US20150102437A1

    公开(公告)日:2015-04-16

    申请号:US14053236

    申请日:2013-10-14

    IPC分类号: B81B3/00 B81B7/00 B81C1/00

    摘要: A device (20) includes sensors (30, 32, 34) that sense different physical stimuli. Fabrication (90) entails forming (92) a device structure (22) to include the sensors and coupling (150) a cap structure (24) with the device structure so that the sensors are interposed between the cap structure and a substrate layer (28) of the device structure. Fabrication (90) further entails forming ports (38, 40) in the substrate layer (28) such that one port (38) exposes a sense element (44) of the sensor (30) to an external environment (72), and another port (40) temporarily exposes the sensor (34) to the external environment. A seal structure (26) is attached to the substrate layer (28) such that one port (40) is hermetically sealed by the seal structure and an external port (46) of the seal structure is aligned with the port (38).

    摘要翻译: 装置(20)包括感测不同物理刺激的传感器(30,32,34)。 制造(90)需要形成(92)装置结构(22)以包括具有装置结构的传感器和联接(150)盖结构(24),使得传感器插入在盖结构和基底层之间(28 )的设备结构。 制造(90)还需要在基底层(28)中形成端口(38,40),使得一个端口(38)将传感器(30)的感测元件(44)暴露于外部环境(72),另一个 端口(40)临时将传感器(34)暴露于外部环境。 密封结构(26)附接到基底层(28),使得一个端口(40)被密封结构气密地密封,并且密封结构的外部端口(46)与端口(38)对齐。

    Integrating diverse sensors in a single semiconductor device

    公开(公告)号:US10364140B2

    公开(公告)日:2019-07-30

    申请号:US14861886

    申请日:2015-09-22

    摘要: In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.