Invention Grant
- Patent Title: Low-contrast metasurfaces
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Application No.: US15758686Application Date: 2016-09-08
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Publication No.: US10365416B2Publication Date: 2019-07-30
- Inventor: Alan Zhan , Shane Colburn , Arka Majumdar
- Applicant: University of Washington
- Applicant Address: US WA Seattle
- Assignee: University of Washington
- Current Assignee: University of Washington
- Current Assignee Address: US WA Seattle
- Agency: Christensen O'Connor Johnson Kindness PLLC
- International Application: PCT/US2016/050793 WO 20160908
- International Announcement: WO2017/044637 WO 20170316
- Main IPC: G02B5/18
- IPC: G02B5/18 ; G02B1/00

Abstract:
Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.
Public/Granted literature
- US20180246262A1 LOW-CONTRAST SILICON NITRIDE-BASED METASURFACES Public/Granted day:2018-08-30
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