Metasurfaces for full-color imaging

    公开(公告)号:US12061347B2

    公开(公告)日:2024-08-13

    申请号:US16965899

    申请日:2019-01-29

    Abstract: Metasurfaces and systems including metasurfaces for imaging and methods of imaging are described. Such metasurfaces may be formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active over a wavelength range and in certain embodiments are configured to form lenses. In particular, the metasurfaces described herein may be configured to focus light passed through the metasurface in an extended depth of focus. Accordingly, the disclosed metasurfaces are generally suitable for generating color without or with minimal chromatic aberrations, for example, in conjunction with computational reconstruction.

    LOW-CONTRAST METASURFACES
    3.
    发明申请

    公开(公告)号:US20200241182A1

    公开(公告)日:2020-07-30

    申请号:US16850966

    申请日:2020-04-16

    Abstract: Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.

    LOW-CONTRAST METASURFACES
    4.
    发明申请

    公开(公告)号:US20200057182A1

    公开(公告)日:2020-02-20

    申请号:US16523868

    申请日:2019-07-26

    Abstract: Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.

    Low-contrast metasurfaces
    5.
    发明授权

    公开(公告)号:US11550084B2

    公开(公告)日:2023-01-10

    申请号:US16850966

    申请日:2020-04-16

    Abstract: Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.

    METASURFACES AND SYSTEMS FOR FULL-COLOR IMAGING AND METHODS OF IMAGING

    公开(公告)号:US20210037219A1

    公开(公告)日:2021-02-04

    申请号:US16965899

    申请日:2019-01-29

    Abstract: Metasurfaces and systems including metasurfaces for imaging and methods of imaging are described. Such metasurfaces may be formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active over a wavelength range and in certain embodiments are configured to form lenses. In particular, the metasufaces described herein may be configured to focus light passed through the metasurface in an extended depth of focus. Accordingly, the disclosed metasurfaces are generally suitable for generating color without or with minimal chromatic aberrations, for example, in conjunction with computational reconstruction.

    Low-contrast metasurfaces
    9.
    发明授权

    公开(公告)号:US10670783B2

    公开(公告)日:2020-06-02

    申请号:US16523868

    申请日:2019-07-26

    Abstract: Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.

    Low-contrast metasurfaces
    10.
    发明授权

    公开(公告)号:US10365416B2

    公开(公告)日:2019-07-30

    申请号:US15758686

    申请日:2016-09-08

    Abstract: Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from “low-contrast” materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.

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