A semiconductor memory device for suppressing a decrease of durability caused by erasure of a block unit or programming of a word unit is provided. A resistance change memory 100 includes a memory array 110 and a controller 120. The memory array 110 stores data by a reversible and nonvolatile variable resistance element. When erasing a selected block of the memory array 110 in response to an external erasure command, the controller 120 sets an EF flag indicating the selected block is in an erasure state without changing block data. The controller 120 further includes a reading unit. The reading unit outputs data of a selected word or data indicating the erasure based on the EF flag when reading the selected word of the memory array 110 in response to an external reading command.