Invention Grant
- Patent Title: Electronic component structures with reduced microphonic noise
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Application No.: US15285210Application Date: 2016-10-04
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Publication No.: US10366836B2Publication Date: 2019-07-30
- Inventor: John Bultitude , John E. McConnell , Galen W. Miller
- Applicant: KEMET Electronics Corporation
- Applicant Address: US SC Simpsonville
- Assignee: KEMET Electronics Corporation
- Current Assignee: KEMET Electronics Corporation
- Current Assignee Address: US SC Simpsonville
- Agency: Patent Filing Specialist, Inc.
- Agent Joseph T. Guy
- Main IPC: H01G4/30
- IPC: H01G4/30 ; B23K1/00 ; B23K1/005 ; B23K1/008 ; B23K1/20 ; B23K35/36 ; B23K35/02 ; H01G4/38 ; H01G4/232 ; H01G4/008 ; H01G4/12 ; B23K101/40 ; B23K101/42

Abstract:
An electronic device is described wherein the electronic device comprises a substrate with a first conductive metal layer and a second conductive metal layer. A first microphonic noise reduction structure is in electrical contact with the first conductive metal layer wherein the first microphonic noise reduction layer comprises at least one of the group consisting of a compliant non-metallic layer and a shock absorbing conductor comprising offset mounting tabs with a space there between coupled with at least one stress relieving portion. An electronic component comprising a first external termination of a first polarity and a second external termination of a second polarity is integral to the electronic device and the first microphonic noise reduction structure and the first external termination are adhesively bonded by a transient liquid phase sintering adhesive.
Public/Granted literature
- US20170025223A1 Electronic Component Structures with Reduced Microphonic Noise Public/Granted day:2017-01-26
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