Invention Grant
- Patent Title: Method of forming a germanium oxynitride film
-
Application No.: US15144506Application Date: 2016-05-02
-
Publication No.: US10367080B2Publication Date: 2019-07-30
- Inventor: Fu Tang , Qi Xie , Jan Willem Maes , Xiaoqiang Jiang , Michael Eugene Givens
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/28 ; H01L29/66
Abstract:
A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the method may include multiple cycles for forming an oxide and a nitride in order to form an oxynitride layer.
Public/Granted literature
- US20170317194A1 METHOD OF FORMING A GERMANIUM OXYNITRIDE FILM Public/Granted day:2017-11-02
Information query
IPC分类:
