Invention Grant
- Patent Title: Semiconductor switching element
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Application No.: US16075840Application Date: 2016-12-26
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Publication No.: US10367091B2Publication Date: 2019-07-30
- Inventor: Jun Saito , Sachiko Aoi , Yasushi Urakami
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
- Applicant Address: JP Toyota JP Kariya
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- Current Assignee Address: JP Toyota JP Kariya
- Agency: Oliff PLC
- Priority: JP2016-035590 20160226
- International Application: PCT/JP2016/005222 WO 20161226
- International Announcement: WO2017/145211 WO 20170831
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/36 ; H01L29/08 ; H01L29/16 ; H01L21/04 ; H01L21/265 ; H01L29/423 ; H01L29/66 ; H01L29/739 ; H01L29/10 ; H01L29/417
Abstract:
A trench gate semiconductor switching element is provided. The semiconductor substrate of the element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench, and a first conductivity type second semiconductor region extending from a position in contact with a lower surface of the body region to a position in contact with a lower surface of the bottom region. The bottom region includes a first bottom region in contact with the gate insulation layer in a first range of the bottom surface positioned at an end in a long direction of the trench and extending from the bottom surface to a first position; and a second bottom region in contact with the gate insulation layer in a second range adjacent to the first range and extending from the bottom surface to a second position lower than the first position.
Public/Granted literature
- US20190058060A1 SEMICONDUCTOR SWITCHING ELEMENT Public/Granted day:2019-02-21
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