Invention Grant
- Patent Title: Memory device with an array timer mechanism
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Application No.: US15923235Application Date: 2018-03-16
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Publication No.: US10373670B1Publication Date: 2019-08-06
- Inventor: Zhi Qi Huang , Wei Lu Chu , Hiromasa Noda , Dong Pan
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/4076 ; G11C11/4072 ; G11C11/4074

Abstract:
A memory device includes a memory array including a plurality of memory cells; and an array timer coupled to the memory array, configured to generate an output timing signal based on a V-I stable input and an analog reference signal, wherein: the V-I stable input is from a bandgap supply circuit, the analog reference signal is from an analog reference block, and the output timing signal is configured to control the memory array.
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