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公开(公告)号：US20230034057A1
公开(公告)日：2023-02-02
申请号：US17391655
申请日：2021-08-02
Applicant: Micron Technology, Inc.
Inventor： Suresh Chattu , Wei Lu Chu , Dong Pan
IPC: G05F3/26 , G11C11/4074 , G05F1/575
Abstract: A semiconductor device may include a bandgap circuit that outputs a reference voltage. The bandgap circuit may include a bandgap core circuit and a startup circuit coupled to the bandgap core circuit. The startup circuit may connect a voltage source to a node that corresponds to an output of the bandgap core circuit in response to the bandgap core circuit being initialized. The startup circuit may also disconnect the voltage source from the node in response to the output voltage being equal to or greater than a desired voltage (e.g., a threshold voltage) and one or more local voltages of the bandgap core circuit being equal to or greater than a local threshold voltage.
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公开(公告)号：US11362627B1
公开(公告)日：2022-06-14
申请号：US17348559
申请日：2021-06-15
Applicant: Micron Technology, Inc.
Inventor： Wei Lu Chu , Dong Pan
Abstract: Systems and devices are provided for tracking pullup current generated by power amplifiers regardless of variations in PVT conditions. An apparatus may include one or more power amplifiers that powers components of the apparatus, a tracking circuit, and a pulse generation circuit. The tracking circuit may include an amplifier. Further, the tracking circuit may include pullup current tracking circuitry that is coupled to the amplifier and generates a first current that tracks pullup current generated by the one or more power amplifiers. Furthermore, the pulse generation circuit may include pullup current generator circuitry that generates a second current that mirrors the first current. In addition, the pulse generation circuit may also include pulse generator circuitry that is coupled to the pullup current generator circuitry and that generates a pulse to control operation of the one or more power amplifiers based at least in part on the second current.
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公开(公告)号：US20220180909A1
公开(公告)日：2022-06-09
申请号：US17114321
申请日：2020-12-07
Applicant: Micron Technology, Inc.
Inventor： Fei Xu , Dong Pan , Wei Lu Chu
Abstract: Methods, systems, and devices for limiting regulator overshoot during power up are described. In some examples, a memory device may generate a first voltage at a first input node of an amplifier of a memory device based on an application, by an external supply, of a second voltage to a terminal of the memory device. The memory device may generate a third voltage at a second node of the amplifier at an amplifier at an offset to the first voltage, where the second node is coupled with a first gate of a first cascode transistor and a second gate of a second cascode transistor. The memory device may activate the amplifier based on generating the third voltage at the second node of the amplifier.
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公开(公告)号：US11217294B2
公开(公告)日：2022-01-04
申请号：US16852019
申请日：2020-04-17
Applicant: Micron Technology, Inc.
Inventor： Wei Lu Chu , Dong Pan
IPC: G11C5/14 , G11C11/22 , G05F1/59 , G05F1/575 , G11C11/4074
Abstract: Methods, systems, and devices for techniques for adjusting current based on operating parameters are described. An apparatus may include an amplifier, a feedback component, and first and second current generators. The amplifier may include an input for receiving a first voltage and an output for outputting a second voltage. The first current generator may be coupled with the output of the amplifier and generate a first current based at least in part on the second voltage. The feedback component may be coupled with the first current generator to modify the first current based at least in part on an operating temperature associated with a memory device. The first current may be proportional to the operating temperature. The second current generator may be coupled with the first current generator to generate a second current based at least in part on the first current modified by the feedback component.
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公开(公告)号：US20210319816A1
公开(公告)日：2021-10-14
申请号：US16843628
申请日：2020-04-08
Applicant: Micron Technology, Inc.
Inventor： Zhi Qi Huang , Wei Lu Chu , Dong Pan
Abstract: Methods, systems, and devices for timing signal delay compensation in a memory device are described. In some memory devices, operations for accessing memory cells may be performed with timing that is asynchronous relative to an input signal. To support asynchronous timing, a memory device may include delay components that support generating a timing signal having aspects that are delayed relative to an input signal. In accordance with examples as disclosed herein, a memory device may include delay components having a variable and configurable impedance, where the configurable impedance may be based at least in part on a configuration signal generated at the memory device. A configuration signal may be generated based on fabrication characteristics of the memory device, or based on operating conditions of the memory device, or various combinations thereof.
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Patent Agency Ranking
公开(公告)号：US10998010B2
公开(公告)日：2021-05-04
申请号：US16823079
申请日：2020-03-18
Applicant: Micron Technology, Inc.
Inventor： Wei Lu Chu , Dong Pan
IPC: G11C5/14 , G11C11/4074
Abstract: Systems and devices are provided for fully discharging leakage current generated during standby and/or power down modes regardless of variations in PVT conditions. An apparatus may include a power generation unit that powers components of the apparatus and a bleeder circuit. The bleeder circuit may include an operational amplifier. Further, the bleeder circuit may include leakage current generator circuitry that is coupled to the operational amplifier and generates a first current that mimics leakage current generated by the power generation unit. Furthermore, the bleeder circuit may include leakage current mirroring circuitry that is coupled to an output of the operational amplifier and that generates a second current that mirrors the first current. In addition, the bleeder circuit may also include leakage current bleeder circuitry that is coupled to the leakage current mirroring circuitry and that generates a third current that sinks the leakage current to ground.
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公开(公告)号：US10425064B2
公开(公告)日：2019-09-24
申请号：US15373158
申请日：2016-12-08
Applicant: Micron Technology, Inc.
Inventor： Dong Pan , Wei Lu Chu
Abstract: Apparatus and methods for a delay circuit are provided. In an example, a delay circuit can include a resistor configured to receive a compensation current, a capacitor configured to receive a charge current based on the compensation current, a first compensation circuit configured to provide a control signal, and a charge-current coupling circuit. The first compensation circuit can include an inverter circuit configured to track an inverter threshold voltage across process, voltage and temperature variations, wherein an output of the inverter circuit is directly coupled to an input of the inverter circuit, and an amplifier configured to receive the output of the inverter circuit an provide the control signal. The charge-current coupling circuit can be configured to receive the control signal and to provide the compensation current and the charge current.
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公开(公告)号：US10216213B2
公开(公告)日：2019-02-26
申请号：US14762162
申请日：2015-04-30
Applicant: Micron Technology, Inc.
Inventor： Wei Lu Chu
Abstract: Apparatuses, methods, and current generators that generate current are described. An example apparatus includes a current source configured to provide a current. The current source may be coupled to a voltage source via a transistor. The transistor may be configured to provide the voltage source to the current source based on a voltage of a gate of the transistor. The example apparatus may further include an amplifier configured to provide a voltage to the gate of the transistor based on a voltage differential between two inputs. The voltage differential between the two inputs may adjust due to process, voltage or temperature changes such that the current provided by the current source remains constant.
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公开(公告)号：US10073477B2
公开(公告)日：2018-09-11
申请号：US14421068
申请日：2014-08-25
Applicant: Micron Technology, Inc.
Inventor： Wei Lu Chu
Abstract: Apparatuses and methods for providing a current independent of temperature are described. An example apparatus includes a current generator that includes two components that are configured to respond equally and opposite to changes in temperature. The responses of the two components may allow a current provided by the current generator to remain independent of temperature. One of the two components in the current generator may mirror a component included in a voltage source that is configured to provide a voltage to the current generator.
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公开(公告)号：US12132451B2
公开(公告)日：2024-10-29
申请号：US17583018
申请日：2022-01-24
Applicant: Micron Technology, Inc.
Inventor： Wei Lu Chu , Dong Pan
IPC: H03F1/30 , G11C11/4074 , H02M3/155 , H03F1/02 , H03F3/21
CPC classification number: H03F1/301 , G11C11/4074 , H02M3/155 , H03F1/0233 , H03F3/211 , H03F2200/504
Abstract: Systems and devices are provided for tracking bandgap current generated by a bandgap circuit and mitigation of leakage current regardless of variations in PVT conditions. An apparatus may include one or more power amplifiers that powers components of the apparatus and comprising a transistor. The apparatus may also include bandgap current mirroring circuitry that generates a mirrored current that mirrors a received current that is process, voltage, and temperature (PVT) independent. The apparatus may also include a bulk voltage generator circuit including an amplifier having an input coupled to the bandgap current mirroring circuitry. Bulk voltage control circuitry is coupled to an output of the amplifier and generates a bulk voltage based on the relationship between the mirrored current and the leakage current.
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