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1.发明公开公开(公告)号：US20240355366A1
公开(公告)日：2024-10-24
申请号：US18633346
申请日：2024-04-11
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Kishan Reddy Gonapati , Dong Pan , Ming Hai Li
Abstract: A semiconductor device may include a voltage threshold compensation (VTC) sense amplifier configured to amplify signals read from memory cells to recognizable logic levels. The VTC sense amplifier may equalize threshold voltages of transistors at the sense amplifier during a compensation phase before sensing a memory cell. The compensation phase may be delayed or extended in duration by an amount based on a combination of currents that are proportional to absolute temperature (PTAT) and zero to absolute temperature (ZTAT), or PTAT and complementary to absolute temperature (CTAT). Different combinations of PTAT and ZTAT currents, or PTAT and CTAT currents, may correspond to different temperature slopes. The semiconductor device may choose from the different temperature slopes to achieve different delays for given temperatures.
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公开(公告)号：US11749331B2
公开(公告)日：2023-09-05
申请号：US17662733
申请日：2022-05-10
Applicant: MICRON TECHNOLOGY, INC.
IPC: G11C11/401 , G11C11/406 , G11C11/4096 , G11C11/4091 , G11C11/408 , G11C11/402
CPC classification number: G11C11/40611 , G11C11/402 , G11C11/4085 , G11C11/4091 , G11C11/4096 , G11C11/40603 , G11C11/40618
Abstract: Apparatuses, systems, and methods for refresh modes. A memory may need to perform targeted refresh operations to refresh the ‘victim’ word lines which are near to frequently accessed ‘aggressor’ word lines. To refresh the victims at a high enough rate, it may be desirable to refresh multiple victims as part of the same refresh operation. However, certain word lines (e.g., word lines in a same section or adjacent sections of the memory) cannot be refreshed together. The memory may have a section comparator, which may check stored aggressor addresses and may provide a signal if there are not two stored addresses which can be refreshed together. Based, in part, on the signal, the memory may activate one of several different refresh modes, which may control the types of refresh operation performed responsive to a refresh signal.
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公开(公告)号：US20230034057A1
公开(公告)日：2023-02-02
申请号：US17391655
申请日：2021-08-02
Applicant: Micron Technology, Inc.
Inventor： Suresh Chattu , Wei Lu Chu , Dong Pan
IPC: G05F3/26 , G11C11/4074 , G05F1/575
Abstract: A semiconductor device may include a bandgap circuit that outputs a reference voltage. The bandgap circuit may include a bandgap core circuit and a startup circuit coupled to the bandgap core circuit. The startup circuit may connect a voltage source to a node that corresponds to an output of the bandgap core circuit in response to the bandgap core circuit being initialized. The startup circuit may also disconnect the voltage source from the node in response to the output voltage being equal to or greater than a desired voltage (e.g., a threshold voltage) and one or more local voltages of the bandgap core circuit being equal to or greater than a local threshold voltage.
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公开(公告)号：US11462291B2
公开(公告)日：2022-10-04
申请号：US17102266
申请日：2020-11-23
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Dong Pan
Abstract: Counters may be provided for individual word lines of a memory for tracking word line accesses. In some examples, multiple counters may be provided for individual word lines. In some examples, the counters may be included on the word lines. The counters may be incremented responsive to word line accesses in some examples. In some examples, the counters may be incremented responsive for a time period for which a word line is held open. In some examples, the counters may be incremented responsive to both word line accesses and time periods for which the word line is held open. In some examples, count values for the counters may be written back to the counters after incrementing. In some examples, the count values may be written back prior to receiving a precharge command.
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公开(公告)号：US11362627B1
公开(公告)日：2022-06-14
申请号：US17348559
申请日：2021-06-15
Applicant: Micron Technology, Inc.
Inventor： Wei Lu Chu , Dong Pan
Abstract: Systems and devices are provided for tracking pullup current generated by power amplifiers regardless of variations in PVT conditions. An apparatus may include one or more power amplifiers that powers components of the apparatus, a tracking circuit, and a pulse generation circuit. The tracking circuit may include an amplifier. Further, the tracking circuit may include pullup current tracking circuitry that is coupled to the amplifier and generates a first current that tracks pullup current generated by the one or more power amplifiers. Furthermore, the pulse generation circuit may include pullup current generator circuitry that generates a second current that mirrors the first current. In addition, the pulse generation circuit may also include pulse generator circuitry that is coupled to the pullup current generator circuitry and that generates a pulse to control operation of the one or more power amplifiers based at least in part on the second current.
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Patent Agency Ranking
公开(公告)号：US20220180909A1
公开(公告)日：2022-06-09
申请号：US17114321
申请日：2020-12-07
Applicant: Micron Technology, Inc.
Inventor： Fei Xu , Dong Pan , Wei Lu Chu
Abstract: Methods, systems, and devices for limiting regulator overshoot during power up are described. In some examples, a memory device may generate a first voltage at a first input node of an amplifier of a memory device based on an application, by an external supply, of a second voltage to a terminal of the memory device. The memory device may generate a third voltage at a second node of the amplifier at an amplifier at an offset to the first voltage, where the second node is coupled with a first gate of a first cascode transistor and a second gate of a second cascode transistor. The memory device may activate the amplifier based on generating the third voltage at the second node of the amplifier.
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公开(公告)号：US11348631B2
公开(公告)日：2022-05-31
申请号：US16997659
申请日：2020-08-19
Applicant: MICRON TECHNOLOGY, INC.
IPC: G11C11/402 , G11C11/406 , G11C11/4096 , G11C11/4091 , G11C11/408
Abstract: Apparatuses, systems, and methods for refresh modes. A memory may need to perform targeted refresh operations to refresh the ‘victim’ word lines which are near to frequently accessed ‘aggressor’ word lines. To refresh the victims at a high enough rate, it may be desirable to refresh multiple victims as part of the same refresh operation. However, certain word lines (e.g., word lines in a same section or adjacent sections of the memory) cannot be refreshed together. The memory may have a section comparator, which may check stored aggressor addresses and may provide a signal if there are not two stored addresses which can be refreshed together. Based, in part, on the signal, the memory may activate one of several different refresh modes, which may control the types of refresh operation performed responsive to a refresh signal.
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公开(公告)号：US20220165347A1
公开(公告)日：2022-05-26
申请号：US17102266
申请日：2020-11-23
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Dong Pan
IPC: G11C29/42 , G11C29/44 , G11C29/20 , G11C11/406 , G11C7/06
Abstract: Counters may be provided for individual word lines of a memory for tracking word line accesses. In some examples, multiple counters may be provided for individual word lines. In some examples, the counters may be included on the word lines. The counters may be incremented responsive to word line accesses in some examples. In some examples, the counters may be incremented responsive for a time period for which a word line is held open. In some examples, the counters may be incremented responsive to both word line accesses and time periods for which the word line is held open. In some examples, count values for the counters may be written back to the counters after incrementing. In some examples, the count values may be written back prior to receiving a precharge command.
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公开(公告)号：US11217294B2
公开(公告)日：2022-01-04
申请号：US16852019
申请日：2020-04-17
Applicant: Micron Technology, Inc.
Inventor： Wei Lu Chu , Dong Pan
IPC: G11C5/14 , G11C11/22 , G05F1/59 , G05F1/575 , G11C11/4074
Abstract: Methods, systems, and devices for techniques for adjusting current based on operating parameters are described. An apparatus may include an amplifier, a feedback component, and first and second current generators. The amplifier may include an input for receiving a first voltage and an output for outputting a second voltage. The first current generator may be coupled with the output of the amplifier and generate a first current based at least in part on the second voltage. The feedback component may be coupled with the first current generator to modify the first current based at least in part on an operating temperature associated with a memory device. The first current may be proportional to the operating temperature. The second current generator may be coupled with the first current generator to generate a second current based at least in part on the first current modified by the feedback component.
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公开(公告)号：US11150681B2
公开(公告)日：2021-10-19
申请号：US16203215
申请日：2018-11-28
Applicant: Micron Technology, Inc.
Abstract: A reference voltage generator is disclosed that may provide a plurality of reference voltages. A reference voltage generator may include a voltage divider, a multiplexer coupled to the voltage divider, an operational amplifier that may receive a voltage from the multiplexer, and a plurality of resistors that may receive an output from the operational amplifier. The reference voltages may be provided from output terminals coupled to the resistors. A reference voltage generator may include a voltage divider, two multiplexers coupled to the voltage divider, an operational amplifier coupled to each multiplexer, and a plurality of resistors coupled between the outputs of the two operational amplifiers. Reference voltages may be provided from output terminals coupled to the resistors.
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