Invention Grant
- Patent Title: Method and system of measuring semiconductor device and method of fabricating semiconductor device using the same
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Application No.: US15969247Application Date: 2018-05-02
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Publication No.: US10373882B2Publication Date: 2019-08-06
- Inventor: Choonshik Leem , Jihye Lee , Deokyong Kim , Soobok Chin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0005979 20140117
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G01N21/956 ; H01J37/28 ; H01L21/66
Abstract:
The measurement method may include obtaining first measurement data from a recess region formed in a semiconductor substrate, obtaining second measurement data from a conductive pattern filling a portion of the recess region, calculating a first volume of the recess region from the first measurement data, calculating a second volume of the conductive pattern from the second measurement data, and calculating a measurement target parameter using a difference between the first and second volumes.
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