公开(公告)号：US10373882B2

公开(公告)日：2019-08-06

申请号：US15969247

申请日：2018-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choonshik Leem ,  Jihye Lee ,  Deokyong Kim ,  Soobok Chin

IPC: G01N21/95 ,  G01N21/956 ,  H01J37/28 ,  H01L21/66

Abstract: The measurement method may include obtaining first measurement data from a recess region formed in a semiconductor substrate, obtaining second measurement data from a conductive pattern filling a portion of the recess region, calculating a first volume of the recess region from the first measurement data, calculating a second volume of the conductive pattern from the second measurement data, and calculating a measurement target parameter using a difference between the first and second volumes.

公开(公告)号：US20180254225A1

公开(公告)日：2018-09-06

申请号：US15969247

申请日：2018-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choonshik LEEM ,  Jihye Lee ,  Deokyong Kim ,  Soobok Chin

IPC: H01L21/66 ,  G01N21/95 ,  G01N21/956 ,  H01J37/28

CPC classification number: H01L22/12 ,  G01B2210/56 ,  G01N21/9501 ,  G01N21/95607 ,  G01N21/95684 ,  H01J37/28 ,  H01J2237/24578 ,  H01J2237/24592

Abstract: The measurement method may include obtaining first measurement data from a recess region formed in a semiconductor substrate, obtaining second measurement data from a conductive pattern filling a portion of the recess region, calculating a first volume of the recess region from the first measurement data, calculating a second volume of the conductive pattern from the second measurement data, and calculating a measurement target parameter using a difference between the first and second volumes.