Invention Grant
- Patent Title: Shield indent trench termination for shielded gate MOSFETs
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Application No.: US15639961Application Date: 2017-06-30
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Publication No.: US10374076B2Publication Date: 2019-08-06
- Inventor: Xiaoli Wu , Joseph Yedinak
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/06 ; H01L29/41
Abstract:
In a general aspect, a power semiconductor device can include a semiconductor region having an active region and a termination region. The device can also include a plurality of trench shield electrodes each having a first portion disposed in the active region and a second portion disposed in the termination region. One or more of the trench shield electrodes can have a second portion that extends a first distance into the termination region, while one or more other trench shield electrodes can have a second portion that extends a second distance into the termination region, the second distance being less than the first distance. The trench shield electrode(s) having the second portion that extends the second distance into the termination region can be interleaved with the trench shield electrode(s) having the second portion that extends the first distance into the termination region.
Public/Granted literature
- US20190006512A1 SHIELD INDENT TRENCH TERMINATION FOR SHIELDED GATE MOSFETS Public/Granted day:2019-01-03
Information query
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