公开(公告)号：US10236340B2

公开(公告)日：2019-03-19

申请号：US15581774

申请日：2017-04-28

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Joseph Yedinak ,  Xiaoli Wu

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/10

Abstract: In a general aspect, a power semiconductor device can include a first trench shield electrode and a second trench shield electrode defined in a semiconductor region, the first and second trench shield electrodes each having a first portion disposed in an active region and a second portion disposed in a termination region. A trench of the first trench shield electrode and a trench of the second trench shield electrode can define a mesa of the semiconductor region therebetween. The device can further include an implant enrichment region disposed in the termination region, the implant enrichment region can be intersected by the first trench shield electrode and the second trench shield electrode, and can have a portion disposed in the mesa of the semiconductor region, the portion extending from the trench of the first trench shield electrode to the trench of the second trench shield electrode.

公开(公告)号：US20190006512A1

公开(公告)日：2019-01-03

申请号：US15639961

申请日：2017-06-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Xiaoli WU ,  Joseph Yedinak

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/06

CPC classification number: H01L29/7811 ,  H01L29/0649 ,  H01L29/0684 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41 ,  H01L29/7813

Abstract: In a general aspect, a power semiconductor device can include a semiconductor region having an active region and a termination region. The device can also include a plurality of trench shield electrodes each having a first portion disposed in the active region and a second portion disposed in the termination region. One or more of the trench shield electrodes can have a second portion that extends a first distance into the termination region, while one or more other trench shield electrodes can have a second portion that extends a second distance into the termination region, the second distance being less than the first distance. The trench shield electrode(s) having the second portion that extends the second distance into the termination region can be interleaved with the trench shield electrode(s) having the second portion that extends the first distance into the termination region.

公开(公告)号：US10374076B2

公开(公告)日：2019-08-06

申请号：US15639961

申请日：2017-06-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Xiaoli Wu ,  Joseph Yedinak

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/06 ,  H01L29/41

Abstract: In a general aspect, a power semiconductor device can include a semiconductor region having an active region and a termination region. The device can also include a plurality of trench shield electrodes each having a first portion disposed in the active region and a second portion disposed in the termination region. One or more of the trench shield electrodes can have a second portion that extends a first distance into the termination region, while one or more other trench shield electrodes can have a second portion that extends a second distance into the termination region, the second distance being less than the first distance. The trench shield electrode(s) having the second portion that extends the second distance into the termination region can be interleaved with the trench shield electrode(s) having the second portion that extends the first distance into the termination region.

公开(公告)号：US10446640B2

公开(公告)日：2019-10-15

申请号：US16257866

申请日：2019-01-25

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Joseph Yedinak ,  Xiaoli Wu

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: In a general aspect, a power semiconductor device can include a first trench shield electrode and a second trench shield electrode defined in a semiconductor region, the first and second trench shield electrodes each having a first portion disposed in an active region and a second portion disposed in a termination region. A trench of the first trench shield electrode and a trench of the second trench shield electrode can define a mesa of the semiconductor region therebetween. The device can further include an implant enrichment region disposed in the termination region, the implant enrichment region can have a plurality of segments, at least one of the segments being disposed in the mesa. The trench shield electrodes can be disposed between segments of the implant enrichment region.