A magnetic random access memory (MRAM) array including several bit cells is described. Each of the bit cells may include a perpendicular magnetic tunnel junction (pMTJ) including a reference layer, a barrier layer supporting the reference layer, and a free layer supporting the barrier layer. A spin-hall conductive material layer may support the free layer. A driver may be operable to set a state of at least one of the bit cells using an increased spin-transfer torque (STT) current and a spin-hall effect from the spin-hall conductive material layer. The increased STT current may be driven through the spin-hall conductive material layer and the pMTJ so that a spin current is generated from the reference layer and the spin-hall conductive material layer.