公开(公告)号：US10381060B2

公开(公告)日：2019-08-13

申请号：US15247791

申请日：2016-08-25

申请人： QUALCOMM Incorporated

发明人： Jimmy Jianan Kan ,  Chando Park ,  Peiyuan Wang ,  Sungryul Kim ,  Seung Hyuk Kang

IPC分类号： G11C11/16 ,  H01L27/22

摘要： A magnetic random access memory (MRAM) array including several bit cells is described. Each of the bit cells may include a perpendicular magnetic tunnel junction (pMTJ) including a reference layer, a barrier layer supporting the reference layer, and a free layer supporting the barrier layer. A spin-hall conductive material layer may support the free layer. A driver may be operable to set a state of at least one of the bit cells using an increased spin-transfer torque (STT) current and a spin-hall effect from the spin-hall conductive material layer. The increased STT current may be driven through the spin-hall conductive material layer and the pMTJ so that a spin current is generated from the reference layer and the spin-hall conductive material layer.

公开(公告)号：US10431734B2

公开(公告)日：2019-10-01

申请号：US15467803

申请日：2017-03-23

申请人： QUALCOMM Incorporated

发明人： Chando Park ,  Jimmy Jianan Kan ,  Peiyuan Wang ,  Seung Hyuk Kang

IPC分类号： H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L43/08 ,  H01F10/32

摘要： A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface and a second interface. The first interface may face the free layer, and a second interface may face the reference layer. The first interface may not physically correlate with the second interface.

公开(公告)号：US20180040668A1

公开(公告)日：2018-02-08

申请号：US15241595

申请日：2016-08-19

申请人： QUALCOMM Incorporated

发明人： Chando Park ,  Jimmy Jianan Kan ,  Seung Hyuk Kang

IPC分类号： H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： Aspects disclosed include reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices. In one example, a width of a bottom electrode of an MTJ device is provided to be less than a width of the MTJ stack of the MTJ device. In this manner, etching of the bottom electrode may be reduced or avoided to reduce or avoid metal redeposition as a result of over-etching the MTJ device to avoid horizontal shorts between an adjacent device(s). In another example, a seed layer is embedded in a bottom electrode of the MTJ device. In this manner, the MTJ stack is reduced in height to reduce or avoid metal redeposition as a result of over-etching the MTJ device. In another example, an MTJ device includes an embedded seed layer in a bottom electrode which also has a width less than a width of the MTJ stack.

公开(公告)号：US09824735B1

公开(公告)日：2017-11-21

申请号：US15237078

申请日：2016-08-15

申请人： QUALCOMM Incorporated

发明人： Jimmy Jianan Kan ,  Chando Park ,  Peiyuan Wang ,  Seung Hyuk Kang

IPC分类号： G11C11/00 ,  G11C11/16 ,  G06F7/58

CPC分类号： G11C11/161 ,  G06F7/588 ,  G11C7/24 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/1695 ,  G11C11/1697 ,  G11C11/18

摘要： An apparatus includes a perpendicular magnetic tunnel junction (MTJ) including a free layer. The apparatus includes a spin orbit torque metal layer coupled to the perpendicular MTJ and configured to change a magnetization state of the free layer responsive to flow of a current along the spin orbit torque metal layer. The apparatus includes a random number generator configured to generate a random number at least partially based on a state of the perpendicular MTJ.

公开(公告)号：US20170077387A1

公开(公告)日：2017-03-16

申请号：US14856372

申请日：2015-09-16

申请人： QUALCOMM Incorporated

发明人： Jimmy Jianan Kan ,  Matthias Georg Gottwald ,  Xiaochun Zhu ,  Chando Park ,  Seung Hyuk Kang

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/12 ,  H01F10/3263 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08

摘要： Magnetic Tunnel Junction (MTJ) devices particularly suited for efficient spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) are disclosed. In one aspect, a MTJ structure with a reduced thickness first pinned layer provided below a tunnel magneto-resistance (TMR) barrier layer is provided. The first pinned layer provided below the TMR bather layer includes one pinned layer magnetized in only one magnetic orientation. In another aspect, a second pinned layer and a spacer layer are provided above a free layer and the TMR barrier layer in the MTJ. The second pinned layer is magnetized in a magnetic orientation that is anti-parallel to that of the first pinned layer. In yet another aspect, a giant magneto-resistance (GMR) spacer layer is provided as the spacer layer between the second pinned layer and the free layer in the MTJ.

摘要翻译： 公开了特别适用于高效自旋转矩传递（STT）磁随机存取存储器（MRAM）（STT MRAM）的磁隧道结（MTJ）装置。 在一个方面，提供了一种在隧道磁阻（TMR）阻挡层下方提供具有减小厚度的第一固定层的MTJ结构。 在TMR沐浴层下面提供的第一被钉扎层包括仅以一个磁性取向磁化的一个钉扎层。 在另一方面，第二被钉扎层和间隔层设置在自由层上方和MTJ中的TMR阻挡层之上。 第二被钉扎层被磁化成与第一被钉扎层反平行的磁取向。 在另一方面，提供巨磁电阻（GMR）间隔层作为MTJ中的第二被钉扎层和自由层之间的间隔层。

公开(公告)号：US10547460B2

公开(公告)日：2020-01-28

申请号：US15356112

申请日：2016-11-18

申请人： QUALCOMM Incorporated

发明人： Peiyuan Wang ,  Chando Park ,  Jimmy Jianan Kan ,  Seung Hyuk Kang

IPC分类号： H04L9/32 ,  G06F21/73 ,  H04L9/08

摘要： Exemplary features pertain to secure communications using Physical Unclonable Function (PUF) devices. Segments of a message to be encrypted are sequentially applied to a PUF device as a series of challenges to obtain a series of responses for generating a sequence of encryption keys, whereby a previous segment of the message is used to obtain a key for encrypting a subsequent segment of the message. The encrypted message is sent to a separate (receiving) device that employs a logical copy of the PUF device for decrypting the message. The logical copy of the PUF may be a lookup table or the like that maps all permissible challenges to corresponding responses for the PUF and may be generated in advance and stored in memory of the receiving device. The data to be encrypted may be further encoded to more fully exercise the PUF to enhance security. Decryption operations are also described.

公开(公告)号：US20170365316A1

公开(公告)日：2017-12-21

申请号：US15185441

申请日：2016-06-17

申请人： QUALCOMM Incorporated

发明人： Peiyuan Wang ,  Jung Pill Kim ,  Jimmy Jianan Kan ,  Chando Park ,  Seung Kang

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C7/20 ,  G11C11/1693 ,  G11C11/1695 ,  G11C14/0081

摘要： In a particular aspect, an apparatus includes a magnetic random access memory (MRAM) cell including a pair of cross coupled inverters including a first inverter and a second inverter. The first inverter includes a first transistor coupled to a first node and a second transistor coupled to the first node. The second inverter includes a third transistor coupled to a second node and a fourth transistor coupled to the second node. The MRAM cell includes a first magnetic tunnel junction (MTJ) element coupled to the second transistor and a second MTJ element coupled to the fourth transistor. The apparatus further includes a voltage initialization circuit coupled to the MRAM cell. The voltage initialization circuit is configured to substantially equalize voltages of the first node and the second node in response to an initialization signal.

公开(公告)号：US09704919B1

公开(公告)日：2017-07-11

申请号：US15192068

申请日：2016-06-24

申请人： QUALCOMM Incorporated

发明人： Yu Lu ,  Wei-Chuan Chen ,  Jimmy Jianan Kan ,  Seung Hyuk Kang

IPC分类号： H01L29/66 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L23/528 ,  H01L23/522 ,  H01L43/12 ,  H01L21/768 ,  H01L21/027 ,  H01L21/311 ,  H01L21/321 ,  H01L21/285 ,  H01L21/288

CPC分类号： H01L27/228 ,  G11C11/16 ,  H01L21/0273 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/31111 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76879 ,  H01L43/12

摘要： High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells are disclosed. In one aspect, an exemplary MRAM bit cell includes a coupling column interconnecting an access transistor and a magnetic tunnel junction (MTJ) therein. The coupling column is disposed across a plurality of interconnection layers. In one aspect, the coupling column comprises a high aspect ratio via. In another aspect, the high aspect ratio via is connected directly between a drain contact coupled to a drain of the access transistor and to an end electrode of the MTJ such that no interconnection line and/or interconnection island is provided in the coupling column. In certain aspects, the coupling column may be disposed between an interconnection line and an adjacent interconnection line without increasing an existing interconnection line pitch, thus allowing for a reduction in MRAM bit cell pitch.

公开(公告)号：US09590010B1

公开(公告)日：2017-03-07

申请号：US15079634

申请日：2016-03-24

申请人： QUALCOMM Incorporated

发明人： Matthias Georg Gottwald ,  Jimmy Jianan Kan ,  Chando Park ,  Xiaochun Zhu ,  Seung Hyuk Kang

IPC分类号： H01L29/66 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L27/11582 ,  H01L28/00 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： Perpendicular magnetic tunnel junction (pMTJ) devices employing a pinned layer stack with a thin top anti-parallel (AP2) layer and having a transitioning layer providing a transitioning start to a body-centered cubic (BCC) crystalline/amorphous structure below the top anti-parallel (AP2) layer, to promote a high tunnel magnetoresistance ratio (TMR) with reduced pinned layer thickness are disclosed. A first anti-parallel (AP) ferromagnetic (AP1) layer in a pinned layer has a face-centered cubic (FCC) or hexagonal closed packed (HCP) crystalline structure. A transitioning material (e.g., Iron (Fe)) is provided in a transitioning layer between the AP1 layer and an AFC layer (e.g., Chromium (Cr)) that starts a transition from a FCC or HCP crystalline structure, to a BCC crystalline/amorphous structure. In this manner, a second AP ferromagnetic (AP2) layer disposed on the AFC layer can be provided in a reduced thickness BCC crystalline or amorphous structure to provide a high TMR with a reduced pinned layer thickness.

摘要翻译： 垂直磁性隧道结（pMTJ）器件采用具有薄顶部反平行（AP2）层的钉扎层叠层，并且具有向顶部抗反射平面（AP2）层下方的体心立方（BCC）结晶/非晶结构提供过渡开始的过渡层 公开了平行（AP2）层，以促进具有减小的钉扎层厚度的高隧道磁阻比（TMR）。 固定层中的第一反平行（AP）铁磁（AP1）层具有面心立方（FCC）或六边形封闭（HCP）晶体结构。 在AP1层和开始从FCC或HCP晶体结构的转变到BCC晶体/晶体的AFC层（例如，铬（Cr））之间的过渡层中提供了转变材料（例如，铁（Fe） 无定形结构。 以这种方式，设置在AFC层上的第二AP铁磁（AP2）层可以以减小的厚度BCC晶体或非晶结构提供，以提供具有减小的钉扎层厚度的高TMR。

公开(公告)号：US10833254B2

公开(公告)日：2020-11-10

申请号：US16431490

申请日：2019-06-04

申请人： QUALCOMM Incorporated

发明人： Chando Park ,  Jimmy Jianan Kan ,  Peiyuan Wang ,  Seung Hyuk Kang

IPC分类号： H01L43/06 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L43/08 ,  H01F10/32

摘要： A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface and a second interface. The first interface may face the free layer, and a second interface may face the reference layer. The first interface may not physically correlate with the second interface.