Invention Grant
- Patent Title: Semiconductor memory device with burst mode
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Application No.: US15706975Application Date: 2017-09-18
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Publication No.: US10381066B2Publication Date: 2019-08-13
- Inventor: Daesuk Kim , Jaeil Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2016-0162320 20161130
- Main IPC: G11C11/4093
- IPC: G11C11/4093 ; G11C7/22 ; G11C7/10 ; G11C11/4076 ; G11C8/12
Abstract:
A semiconductor device may include a data input and output circuit (I/O) configured to selectively or simultaneously drive input and output lines according to a burst length and a location of a memory area selected by an address to allow the semiconductor device to receive or output data regardless of the burst length being changed.
Public/Granted literature
- US20180151217A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-05-31
Information query
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