- 专利标题: Memory interface latch with integrated write-through and fence functions
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申请号: US15823640申请日: 2017-11-28
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公开(公告)号: US10381098B2公开(公告)日: 2019-08-13
- 发明人: Elizabeth L. Gerhard , Todd A. Christensen , Chad A. Adams , Peter T. Freiburger
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Nathan M. Rau
- 主分类号: G11C29/38
- IPC分类号: G11C29/38 ; G11C7/10 ; G11C29/36 ; G06F17/50 ; H03K19/20
摘要:
A memory interface latch including a data NAND gate and a feedback gate can be created within an integrated circuit (IC). When a feedback node is driven low, the data NAND gate can drive an inverted value of a memory array bitline input to a data output of the memory interface latch within a time of one gate delay. A feedback gate can, in a functional mode, during one phase of a clock signal, drive the feedback node high and during the other phase of the clock signal, drive the feedback node to a complement the data output. The feedback gate can be also, in an LBIST write-through mode, drive the feedback node to the value of a WRITE_DATA input. The feedback gate can be also, in a fence mode, drive the feedback node to fixed logic value.
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