Invention Grant
- Patent Title: Capacitor structure
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Application No.: US15804463Application Date: 2017-11-06
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Publication No.: US10381161B2Publication Date: 2019-08-13
- Inventor: Chi-Chang Lee , Wen-Long Lu
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Main IPC: H01G4/30
- IPC: H01G4/30 ; H01G4/228 ; H01G4/06 ; H01G4/012 ; H01G4/008 ; H01G4/10

Abstract:
A capacitor structure includes a first conductive layer, a first insulation layer, a first dielectric layer and a second conductive layer. The first conductive layer includes a first conductive material. The first insulation layer is disposed adjacent to the first conductive layer in a same plane as the first conductive layer. The first dielectric layer is on the first conductive layer and the first insulation layer. The second conductive layer is on the first dielectric layer and includes a second conductive material. The first conductive material is different from the second conductive material.
Public/Granted literature
- US20190139708A1 CAPACITOR STRUCTURE Public/Granted day:2019-05-09
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