A photoresist, a patterning method of a quantum dot layer, a QLED, a quantum dot color filter and a display device are disclosed, which can solve the problem that current patterning methods destroy quantum dots. The patterning method of a quantum dot layer includes the steps of: forming a hydrophilic photoresist pattern which comprises forming a photoresist material layer on a substrate by using a photoresist, patterning the photoresist material layer to form a photoresist pattern, and subjecting the photoresist to hydrophilic treatment; applying quantum dots; removing the quantum dots retained on the photoresist pattern; and stripping the photoresist pattern. The patterning method of a quantum dot layer in the present disclosure can improve the hydrophilic performance of the photoresist and reduce the adhesion of the lipophilic quantum dots on the photoresist.