A memory device includes a memory cell, a replica cell, a read circuit, a write wordline, a read wordline, a dummy read wordline, a write bitline, a read bitline, a reference bitline, a sourceline, and a first wiring. The memory cell is electrically connected to the write wordline, the read wordline, the write bitline, the read bitline, and the sourceline. The read circuit outputs a potential based on the result of comparing the potential of the reference bitline and the potential of the read bitline. The replica cell includes a first transistor and a second transistor. The first transistor and the second transistor are electrically connected to each other in series between the bitline and the sourceline. A gate of the first transistor and a gate of the second transistor are electrically connected to a dummy read wordline and the first wiring, respectively.